Interlayer interactions in anisotropic atomically thin rhenium diselenide

Nano Research

Volumn 8, Issue 11, 2015, Pages 3651-3661

  Zhao, Huan ^a   Wu, Jiangbin ^b   Zhong, Hongxia ^c,e   Guo, Qiushi ^d   Wang, Xiaomu ^d   Xia, Fengnian ^d   Yang, Li ^c   Tan, Pingheng ^b   Wang, Han ^a  

^a University of Southern California   (United States)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c WASHINGTON UNIVERSITY   (United States)

^d Yale University   (United States)

^e PEKING UNIVERSITY   (China)

Author keywords

anisotropy; photoluminescence; Raman; rhenium diselenide

Indexed keywords

EID: 84946491983     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-015-0865-0     Document Type: Article

References (52)

1. Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and optoelectronics of twodimensional transition metal dichalcogenides. Nat. Nanotechnol. 2012, 7, 699–712.
2. Geim, A. K.; Grigorieva, I. V. Van der Waals heterostructures. Nature2013, 499, 419–425.
3. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L.-J.; Loh, K. P.; Zhang, H. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 2013, 5, 263–275.
4. Xu, X. D.; Yao, W.; Xiao, D.; Heinz, T. F. Spin and pseudospins in layered transition metal dichalcogenides. Nat. Phys. 2014, 10, 343–350.
5. Lee, Y.-H.; Yu, L. L.; Wang, H.; Fang, W. J.; Ling, X.; Shi, Y. M.; Lin, C.-T.; Huang, J.-K.; Chang, M.-T.; Chang, C.-S. et al. Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces. Nano Lett. 2013, 13, 1852–1857.
6. 2. Phys. Rev. B2013, 87, 081307.
7. Ling, X.; Wang, H.; Huang, S. X.; Xia, F. N.; Dresselhaus, M. S. The renaissance of black phosphorus. Proc. Natl. Acad. Sci. USA2015, 112, 4523–4530.
8. Li, L. K.; Yu, Y. J.; Ye, G. J.; Ge, Q. Q.; Ou, X. D.; Wu, H.; Feng, D. L.; Chen, X. H.; Zhang, Y. B. Black phosphorus field-effect transistors. Nat. Nanotechnol. 2014, 9, 372–377.
9. Xia, F. N.; Wang, H.; Jia, Y. C. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 2014, 5, 4458.
10. Liu, H.; Neal, A. T.; Zhu, Z.; Luo, Z.; Xu, X. F.; Tománek, D.; Ye, P. D. Phosphorene: An unexplored 2D semiconductor with a high hole mobility. ACS Nano2014, 8, 4033–4041.
11. Avsar, A.; Vera-Marun, I. J.; Tan, J. Y.; Watanabe, K.; Taniguchi, T.; Castro Neto, A. H.; Özyilmaz, B. Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors. ACS Nano2015, 9, 4138–4145.
12. Wang, H.; Wang, X. M.; Xia, F. N.; Wang, L. H.; Jiang, H.; Xia, Q. F.; Chin, M. L.; Dubey, M.; Han, S.-J. Black phosphorus radio-frequency transistors. Nano Lett. 2014, 14, 6424–6429.
13. Haratipour, N.; Robbins, M. C.; Koester, S. J. Black phosphorus p-MOSFETs with 7-nm HfO2 gate dielectric and low contact resistance. IEEE Electr. Device Lett. 2015, 36, 411–413.
14. Youngblood, N.; Chen, C.; Koester, S. J.; Li, M. Waveguideintegrated black phosphorus photodetector with high responsivity and low dark current. Nat. Photon. 2015, 9, 247–252.
15. Buscema, M.; Groenendijk, D. J.; Blanter, S. I.; Steele, G. A.; van der Zant, H. S. J.; Castellanos-Gomez, A. Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. Nano Lett. 2014, 14, 3347–3352.
16. Low, T.; Rodin, A. S.; Carvalho, A.; Jiang, Y. J.; Wang, H.; Xia, F. N.; Neto, A. H. C. Tunable optical properties of multilayer black phosphorus thin films. Phys. Rev. B2014, 90, 075434.
17. Xia, F. N.; Wang, H.; Xiao, D.; Dubey, M.; Ramasubramaniam, A. Two-dimensional material nanophotonics. Nat. Photon. 2014, 8, 899–907.
18. Zhao, H.; Guo, Q. S.; Xia, F. N.; Wang, H. Two-dimensional materials for nanophotonics application. Nanophotonics, in press, DOI: 10.1515/nanoph-2014-0022.
19. Fei, R. X.; Faghaninia, A.; Soklaski, R.; Yan, J.-A.; Lo, C.; Yang, L. Enhanced thermoelectric efficiency via orthogonal electrical and thermal conductances in phosphorene. Nano Lett. 2014, 14, 6393–6399.
20. Lamfers, H.-J.; Meetsma, A.; Wiegers, G.; De Boer, J. The crystal structure of some rhenium and technetium dichalcogenides. J. Alloy. Compd. 1996, 241, 34–39.
21. Kertesz, M.; Hoffmann, R. Octahedral vs. trigonal-prismatic coordination and clustering in transition-metal dichalcogenides. J. Am. Chem. Soc. 1984, 106, 3453–3460.
22. 2 in the real and the hypothetical undistorted structures. J. Phys.: Condens. Matter1997, 9, 4411–4424.
23. 2 nanosheet transistors. Nanoscale2014, 6, 7226–7231.
24. 2 due to electronic and vibrational decoupling. Nat. Commun. 2014, 5, 3252.
25. 2: Anisotropy in the van der Waals plane. J. Appl. Phys. 1993, 74, 5266–5268.
26. 2 layered semiconductors. Phys. Rev. B1998, 58, 16130–16135.
27. 2 layered crystals. J. Alloy. Compd. 2001, 317–318, 222–226.
28. Ho, C.-H. Dichroic electro-optical behavior of rhenium sulfide layered crystal. Crystal Struct. Theory Appl. 2013, 2, 65–69.
29. 2 by nanoscale strain engineering. Nano Lett. 2015, 15, 1660–1666.
30. 2. Jpn. J. Appl. Phys. 2013, 52, 04CH06.
31. 2. J. Chem. Phys. 2012, 137, 024509.
32. 2 nanosheet photodetectors. Sci. Rep. 2014, 4, 5442.
33. Pickett, W. E. Pseudopotential methods in condensed matter applications. Comput. Phys. Rep. 1989, 9, 115–197.
34. Novoselov, K. S.; Geim, A. K.; Morozov, S.; Jiang, D.; Zhang, Y.; Dubonos, S.; Grigorieva, I.; Firsov, A. Electric field effect in atomically thin carbon films. Science2004, 306, 666–669.
35. 2. Acta Chem. Scand. 1965, 19, 79–94.
36. Tan, P. H.; Han, W. P.; Zhao, W. J.; Wu, Z. H.; Chang, K.; Wang, H.; Wang, Y. F.; Bonini, N.; Marzari, N.; Pugno, N. et al. The shear mode of multilayer graphene. Nat Mater2012, 11, 294–300.
37. 2. Phys. Rev. B2013, 87, 115413.
38. 2. Nano Lett. 2013, 13, 1007–1015.
39. Tan, P.-H.; Wu, J.-B.; Han, W.-P.; Zhao, W.-J.; Zhang, X.; Wang, H.; Wang, Y.-F. Ultralow-frequency shear modes of 2-4 layer graphene observed in scroll structures at edges. Phys. Rev. B2014, 89, 235404.
40. Ling, X.; Liang, L. B.; Huang, S. X.; Puretzky, A. A.; Geohegan, D. B.; Sumpter, B. G.; Kong, J.; Meunier, V.; Dresselhaus, M. S. Observation of low-frequency interlayer breathing modes in few-layer black phosphorus. 2015, arXiv: materials science/1502.07804. arXiv.org e-Print archive. http://archiv.org/abs/1502.07804.
41. Wu, J.-B.; Zhang, X.; Ijäs, M.; Han, W.-P.; Qiao, X.-F.; Li, X.-L.; Jiang, D.-S.; Ferrari, A. C.; Tan, P.-H. Resonant Raman spectroscopy of twisted multilayer graphene. Nat. Commun. 2014, 5, 5309.
42. Zhang, X.; Qiao, X.-F.; Shi, W.; Wu, J.-B.; Jiang, D.-S.; Tan, P.-H. Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material. Chem. Soc. Rev. 2015, 44, 2757–2785.
43. 2: An anisotropic layered semiconductor. ACS Nano2014, 8, 11154–11164.
44. Li, X. L.; Qiao, X. F.; Han, W.-P.; Lu, Y.; Tan, Q.-H.; Liu, X.-L.; Tan, P. H. Layer number identification of intrinsic and defective multilayered graphenes up to 100 layers by the Raman mode intensity from substrates. Nanoscale2015, 7, 8135–8141.
45. 2: Evolution of Raman scattering. Adv. Funct. Mater. 2012, 22, 1385–1390.
46. 2. Phys. Rev. B2011, 84, 155413.
47. 2. Nanoscale2013, 5, 9677–9683.
48. 2. Nano Lett. 2012, 12, 5576–5580.
49. 2. Acs Nano2012, 7, 791–797.
50. 2. Nano Lett. 2010, 10, 1271–1275.
51. Wang, X. M.; Jones, A. M.; Seyler, K. L.; Tran, V.; Jia, Y. C.; Zhao, H.; Wang, H.; Yang, L.; Xu, X. D.; Xia, F. N. Highly anisotropic and robust excitons in monolayer black phosphorus. 2014, arXiv: mesoscale and nanoscale physics/1411.1695. arXiv.org e-Print archive. http://archiv.org/abs/1411.1695.
52. 2 under ionic liquid gating. Nano Res. 2014, 7, 973–980.