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Volumn 7, Issue 17, 2015, Pages 8135-8141
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Layer number identification of intrinsic and defective multilayered graphenes up to 100 layers by the Raman mode intensity from substrates
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CRYSTAL ORIENTATION;
DEFECTS;
DIELECTRIC MATERIALS;
GRAPHENE;
LASER EXCITATION;
LOW-K DIELECTRIC;
RAMAN SPECTROSCOPY;
SILICA;
SUBSTRATES;
DIELECTRIC SUBSTRATES;
EXCITATION WAVELENGTH;
EXPERIMENTAL PARAMETERS;
LASER POLARIZATION;
LAYER NUMBER IDENTIFICATIONS;
NUMERICAL APERTURE;
RAMAN INTENSITIES;
TWO DIMENSIONAL (2 D);
SILICON;
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EID: 84929484536
PISSN: 20403364
EISSN: 20403372
Source Type: Journal
DOI: 10.1039/c5nr01514f Document Type: Article |
Times cited : (83)
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References (31)
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