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Advanced Materials

Volumn 27, Issue 41, 2015, Pages 6431-6437

Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy

(8) Chen, Kun a Wan, Xi a Xie, Weiguang b Wen, Jinxiu c Kang, Zhiwen a Zeng, Xiaoliang d Chen, Huanjun c Xu, Jianbin a

a CHINESE UNIVERSITY OF HONG KONG (Hong Kong)

b JINAN UNIVERSITY (China)

c SUN YAT SEN UNIVERSITY (China)

d SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY (China)

Author keywords

built in electric fields; built in potential; depletion layer width; heterostructures; SKPFM

Indexed keywords

ELECTRIC FIELDS; MOLYBDENUM COMPOUNDS;

BUILT-IN ELECTRIC FIELDS; BUILT-IN POTENTIAL; DEPLETION LAYER; FUNDAMENTAL ATTRIBUTES; GROWTH STRATEGY; HETEROSTRUCTURE DEVICES; SCANNING KELVIN PROBE FORCE MICROSCOPY; SKPFM;

HETEROJUNCTIONS;

EID: 84946039721 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201502375 Document Type: Article

Times cited : (222)

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