Photoluminescence of two-dimensional GaTe and GaSe films

2D Materials

Volumn 2, Issue 3, 2015, Pages

  Del Pozo Zamudio, O ^a   Schwarz, S ^a   Sich, M ^a   Akimov, I A ^b   Bayer, M ^b   Schofield, R C ^a   Chekhovich, E A ^a   Robinson, B J ^c   Kay, N D ^c   Kolosov, O V ^c   Dmitriev, A I ^d   Lashkarev, G V ^d   Borisenko, D N ^e   Kolesnikov, N N ^e   Tartakovskii, A I ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b TU DORTMUND UNIVERSITY   (Germany)

^c LANCASTER UNIVERSITY   (United Kingdom)

^d FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^e INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

2 dsemiconductors; III VI materials; Optical properties; Photoluminescence

Indexed keywords

HETEROJUNCTIONS; INORGANIC COMPOUNDS; LAYERED SEMICONDUCTORS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SELENIUM COMPOUNDS; TELLURIUM COMPOUNDS; TEMPERATURE; VAN DER WAALS FORCES;

2 DSEMICONDUCTORS; BUILDING BLOCKES; CARRIER ESCAPES; CONTINUOUS WAVES; LOW TEMPERATURES; MICRO PHOTOLUMINESCENCE; NON-RADIATIVE; OPTOELECTRONIC APPLICATIONS;

GALLIUM COMPOUNDS;

EID: 84945943963     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/2/3/035010     Document Type: Article

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