Excitons and band structure of highly anisotropic GaTe single crystals

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 3, 2001, Pages

  Yamamoto, Aishi ^a   Syouji, Atsushi ^a   Goto, Takenari ^a   Kulatov, Erkin ^b   Ohno, Kaoru ^c   Kawazoe, Yoshiyuki ^c   Uchida, Kazuhito ^d   Miura, Noboru ^d  

^a TOHOKU UNIVERSITY   (Japan)

^b PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

^c TOHOKU UNIVERSITY   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; TELLURIUM DERIVATIVE;

ABSORPTION SPECTROSCOPY; ARTICLE; CRYSTAL; ENERGY; LUMINESCENCE; MAGNETIC FIELD; MATERIALS; MATERIALS TESTING; RAMAN SPECTROMETRY; SEMICONDUCTOR;

EID: 0034894838     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.035210     Document Type: Article

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