Microhardness and structural defects of GaSe layered semiconductor

Journal of Crystal Growth

Volumn 316, Issue 1, 2011, Pages 20-24

  Borisenko, E B ^a   Kolesnikov, N N ^a   Borisenko, D N ^a   Bozhko, S I ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

A1. Crystal morphology; A1. Defects; A2. Bridgman technique; A2. Growth from melt; B2. Semiconducting gallium compounds

Indexed keywords

A1. DEFECTS; A2. BRIDGMAN TECHNIQUE; A2. GROWTH FROM MELT; B2. SEMICONDUCTING GALLIUM COMPOUNDS; CRYSTAL MORPHOLOGIES;

ANISOTROPY; ATOMIC FORCE MICROSCOPY; DEFECTS; DISLOCATIONS (CRYSTALS); INDENTATION; LOADS (FORCES); MICROHARDNESS; MORPHOLOGY; OPTICAL MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE TOPOGRAPHY;

SINGLE CRYSTALS;

EID: 79551688417     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.12.021     Document Type: Article

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