Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications

Semiconductor Science and Technology

Volumn 30, Issue 10, 2015, Pages

  Sarkar, Biplab ^a   Lee, Bongmook ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

diffusion; forming; reset; RRAM; set; synapse

Indexed keywords

ALUMINUM; DIFFUSION; DISSOLUTION; FORMING; VACANCIES;

CONDUCTANCE MODULATIONS; RESET; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RRAM; SET; SET OPERATION; SYNAPSE; VACANCY CONCENTRATION;

RANDOM ACCESS STORAGE;

EID: 84945157831     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/30/10/105014     Document Type: Article

References (22)

1. Kuzum D, Yu S and Wong H S P 2013 Synaptic electronics: materials, devices and applications Nanotechnology 24 382001
2. Suri M, Bichler O, Querlioz D, Cueto O, Perniola L, Sousa V, Vuillaume D, Gamrat C and DeSalvo B 2011 Phase change memory as synapse for ultra-dense neuromorphic systems: application to complex visual pattern extraction IEEE Int. Electron Devices Meeting (IEDM) pp 1-4
3. Suri M, Bichler O, Querlioz D, Palma G, Vianello E, Vuillaume D, Gamrat C and DeSalvo B 2012 CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: auditory (Cochlea) and visual (Retina) cognitive processing applications IEEE Int. Electron Devices Meeting (IEDM) pp 1-10
4. Wu Y, Yu S, Wong H S P, Chen Y S, Lee H Y, Wang S M, Gu P Y, Chen F and Tsai M J 2012 AlOx-based resistive switching device with gradual resistance modulation for neuromorphic device application IEEE Int. Memory Workshop (IMW) pp 1-4
5. Ambrogio S, Balatti S, Nardi F, Facchinetti S and Ielmini D 2013 Spike-timing dependent plasticity in a transistor-selected resistive switching memory Nanotechnology 24 384012
6. Yu S, Gao B, Fang Z, Yu H, Kang J and Wong H S P 2013 A low energy oxide-based electronic synaptic device for neuromorphic visual systems with tolerance to device variation Adv. Mater. 25 1774-9
7. Wu Y, Yu S, Lee B and Wong H S P 2011 Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation J. Appl. Phys. 110 094104
8. Cagli C et al 2011 Experimental and theoretical study of electrode effects in HfO2 based RRAM IEEE Int. Electron Devices Meeting (IEDM) pp 1-28
9. Vandelli L, Padovani A, Larcher L, Broglia G, Ori G, Montorsi M, Bersuker G and Pavan P 2011 Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices IEEE Int. Electron Devices Meeting (IEDM) pp 1-17
10. Yu S and Wong H S P 2010 A phenomenological model for the reset mechanism of metal oxide RRAM IEEE Electron Device Lett. 31 1455-7
11. Yang X et al 2013 Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology J. Phys. D: Appl. Phys. 46 245107
12. Vandelli L, Padovani A, Larcher L and Bersuker G 2013 Microscopic modeling of electrical stress-induced breakdown in poly-crystalline hafnium oxide dielectrics IEEE Trans. Electron Devices 60 1754-62
13. Zhong C W et al Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devices Surf. Coatings Technol. 231 563-6
14. Raghavan N, Degraeve R, Fantini A, Goux L, Wouters D J, Groeseneken G and Jurczak M 2013 Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability IEEE Int. Electron Devices Meeting (IEDM) pp 1-21
15. Long S, Perniola L, Cagli C, Buckley J, Lian X, Miranda E, Pan F, Liu M and Sune J 2013 Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO2-based RRAM Sci. Rep. 3 2929
16. Lv H, Xu X, Liu H, Liu R, Liu Q, Banerjee W, Sun H, Long S, Li L and Liu M 2015 Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory Sci. Rep. 5 7764
17. Huang P et al 2013 Analytical model of endurance degradation and its practical applications for operation scheme optimization in metal oxide based RRAM IEEE Electron Device Meeting (IEDM) pp 1-22
18. Tang Y Z, Fang Z, Wang X P, Weng B B, Chen Z X and Lo G Q 2014 A novel RRAM stack with TaOX/HfOy double-switching-layer configuration showing low operation current through complimentary switching of back-to-back connected subcells IEEE Electron Device Lett. 35 627-9
19. Long B, Li Y and Jha R 2012 Switching characteristics of Ru/HfO2/TiO2-x/Ru RRAM devices for digital and analog nonvolatile memory applications IEEE Electron Device Letts. 33 706-8
20. Sun J et al 2013 In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory Appl. Phys. Lett. 102 053502
21. Ielmini D, Nardi F and Cagli C 2011 Universal reset characteristics of unipolar and bipolar metal-oxide RRAM IEEE Trans. Electron Devices 58 3246-53
22. Sarkar B, Lee B and Misra V 2015 Understanding the influence of Ea and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM Dev. Res. Conf. (DRC) pp 149-50