Switching characteristics of Ru/HfO 2/TiO 2-x/Ru RRAM devices for digital and analog nonvolatile memory applications

IEEE Electron Device Letters

Volumn 33, Issue 5, 2012, Pages 706-708

  Long, Branden ^a   Li, Yibo ^a   Jha, Rashmi ^a,b  

^a Toledo   (United States)

^b IBM   (United States)

Author keywords

Nonvolatile memories; Resistive random access memory (RRAM); Transition metal oxide (TMO)

Indexed keywords

ACCESS DEVICES; BISTABLE SWITCHING; COMPLIANCE CURRENT; HIGH-RESISTANCE STATE; I-V MEASUREMENTS; INTERMEDIATE STATE; LOW-RESISTANCE STATE; NON-VOLATILE; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; RESET VOLTAGE; RESISTANCE STATE; RESISTIVE RANDOM ACCESS MEMORY; SWITCHING CHARACTERISTICS; TEMPERATURE DEPENDENT; TRANSITION-METAL OXIDES;

DIGITAL DEVICES; METALLIC COMPOUNDS; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 84862780839     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2188775     Document Type: Article

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