Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Nano Research

Volumn 8, Issue 10, 2015, Pages 3332-3341

  Yuan, Xiang ^a   Tang, Lei ^a   Wang, Peng ^b   Chen, Zhigang ^c   Zou, Yichao ^c   Su, Xiaofeng ^b   Zhang, Cheng ^a   Liu, Yanwen ^a   Wang, Weiyi ^a   Liu, Cong ^b   Chen, Fansheng ^b   Zou, Jin ^c   Zhou, Peng ^a   Hu, Weida ^b   Xiu, Faxian ^a  

^a FUDAN UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

GaTe; imaging; p n junction; photodiode; photosensor; wafer scale two dimensional materials

Indexed keywords

EID: 84943362554     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-015-0833-8     Document Type: Article

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