SCOPUS 정보 검색 플랫폼

AIP Advances

Volumn 5, Issue 10, 2015, Pages

Investigating the electronic properties of Al2O3/Cu(In,Ga)Se2 interface

(6) Kotipalli, R a Vermang, B b,c,d Joel, J b Rajkumar, R a Edoff, M b Flandre, D a

a UNIVERSITÉ CATHOLIQUE DE LOUVAIN (Belgium)

b UPPSALA UNIVERSITY (Sweden)

c UNIVERSITY OF LEUVEN (Belgium)

d IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC LAYER DEPOSITION; CAPACITANCE; COPPER; ELECTRONIC PROPERTIES; GALLIUM; PASSIVATION; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS;

ATOMIC LAYER DEPOSITED; CONDUCTANCE-FREQUENCY; ELECTRICAL CHARACTERIZATION; ELECTRONIC PARAMETERS; FIXED CHARGE DENSITY; INTERFACE TRAP CHARGE; NEGATIVE FIXED CHARGE; SURFACE CONCENTRATION;

INTERFACES (MATERIALS);

EID: 84942931747 PISSN: None EISSN: 21583226 Source Type: Journal
DOI: 10.1063/1.4932512 Document Type: Article

Times cited : (71)

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