Influence of Ga/(Ga + In) grading on deep-defect states of Cu(In,Ga)Se2 solar cells

Physica Status Solidi - Rapid Research Letters

Volumn 9, Issue 3, 2015, Pages 157-160

  Kotipalli, Ratan ^a   Vermang, Bart ^b,c   Fjällström, Viktor ^b   Edoff, Marika ^b   Delamare, Romain ^a   Flandre, Denis ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b UPPSALA UNIVERSITY   (Sweden)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Admittance spectroscopy; CuInGaSe2; Deep levels; Defects; Gallium; Solar cells

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; DEFECTS; ELECTRIC ADMITTANCE; GALLIUM; OPEN CIRCUIT VOLTAGE; SOLAR CELLS;

ADMITTANCE SPECTROSCOPIES; CAPACITANCE PROFILING; CUINGASE2; DEEP-LEVELS; RECOMBINATION CENTERS; SHOCKLEY-READ-HALL RECOMBINATIONS; SOLAR CELL PERFORMANCE; SPACE CHARGE REGIONS;

GRADING;

EID: 84925383293     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201510024     Document Type: Article

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