Introduction of Si PERC rear contacting design to boost efficiency of Cu(In,Ga)Se2solar cells

IEEE Journal of Photovoltaics

Volumn 4, Issue 6, 2014, Pages 1644-1649

  Vermang, Bart ^a   Watjen, Jorn Timo ^a   Frisk, Christopher ^a   Fjallstrom, Viktor ^a   Rostvall, Fredrik ^a   Edoff, Marika ^a   Salome, Pedro ^b   Borme, Jerome ^b   Nicoara, Nicoleta ^b   Sadewasser, Sascha ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b INTERNATIONAL IBERIAN NANOTECHNOLOGY LABORATORY   (Portugal)

Author keywords

Al2O3; Cu(In,Ga)Se2; electron beam lithography; local point contacts; nanosized openings; passivated emitter and rear cell (PERC); passivation layer; rear internal reflection; rear surface recombination velocity; Si

Indexed keywords

SILICON;

CU (IN ,GA)SE; INTERNAL REFLECTIONS; NANOSIZED OPENINGS; PASSIVATED EMITTER AND REAR CELL (PERC); PASSIVATION LAYER; SURFACE RECOMBINATION VELOCITIES;

ELECTRON BEAM LITHOGRAPHY;

EID: 84908233637     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2014.2350696     Document Type: Article

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