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Volumn 22, Issue 10, 2014, Pages 1023-1029

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells

Author keywords

Al2O3; Cu(In,Ga)Se2; Nano sized point contact openings; PERC; Rear internal reflection; Rear surface recombination velocity; Si; Surface passivation layer; Thin

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; CADMIUM SULFIDE; CADMIUM SULFIDE SOLAR CELLS; EFFICIENCY; II-VI SEMICONDUCTORS; MAGNESIUM COMPOUNDS; NANOSPHERES; OPEN CIRCUIT VOLTAGE; POINT CONTACTS; SILICON; SILICON SOLAR CELLS;

EID: 84908030817     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2527     Document Type: Article
Times cited : (138)

References (15)
  • 4
    • 0001397243 scopus 로고    scopus 로고
    • 19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells
    • Zhao J, Wang A, Green MA, Ferrazza F. 19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells. Applied Physics Letters 1998; 73: 1991-1993.
    • (1998) Applied Physics Letters , vol.73 , pp. 1991-1993
    • Zhao, J.1    Wang, A.2    Green, M.A.3    Ferrazza, F.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.