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Volumn 22, Issue 10, 2014, Pages 1023-1029
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Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells
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Author keywords
Al2O3; Cu(In,Ga)Se2; Nano sized point contact openings; PERC; Rear internal reflection; Rear surface recombination velocity; Si; Surface passivation layer; Thin
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Indexed keywords
ALUMINA;
ALUMINUM OXIDE;
ATOMIC LAYER DEPOSITION;
CADMIUM SULFIDE;
CADMIUM SULFIDE SOLAR CELLS;
EFFICIENCY;
II-VI SEMICONDUCTORS;
MAGNESIUM COMPOUNDS;
NANOSPHERES;
OPEN CIRCUIT VOLTAGE;
POINT CONTACTS;
SILICON;
SILICON SOLAR CELLS;
AL2O3;
CONTACT OPENING;
CU(IN , GA)SE2;
INTERNAL REFLECTIONS;
PERC;
SURFACE PASSIVATION;
SURFACE RECOMBINATION VELOCITIES;
THIN;
PASSIVATION;
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EID: 84908030817
PISSN: 10627995
EISSN: 1099159X
Source Type: Journal
DOI: 10.1002/pip.2527 Document Type: Article |
Times cited : (138)
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References (15)
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