Surface passivation of Cu(In,Ga)Se 2 using atomic layer deposited Al 2O 3

Applied Physics Letters

Volumn 100, Issue 2, 2012, Pages

  Hsu, W W ^a   Chen, J Y ^a   Cheng, T H ^a   Lu, S C ^a   Ho, W S ^a   Chen, Y Y ^a   Chien, Y J ^b   Liu, C W ^a,c,d  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b AU OPTRONICS CORPORATION   (Taiwan)

^c Graduate Institute of Photonics and Optoelectronics   (Taiwan)

^d NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE MEASUREMENTS; COULOMB REPULSIONS; CU(IN , GA)SE; FIELD EFFECTS; FIRST-PRINCIPLES CALCULATION; INTERFACE DEFECTS; NEGATIVE FIXED CHARGE; ORDERS OF MAGNITUDE; PASSIVATION EFFECT; PHOTOLUMINESCENCE INTENSITIES; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

CARRIER CONCENTRATION; DEFECT DENSITY; GALLIUM; PASSIVATION; PHOTOLUMINESCENCE;

ALUMINUM;

EID: 84862908670     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3675849     Document Type: Article

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