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Energy Procedia

Volumn 27, Issue , 2012, Pages 319-324

Silicon surface passivation by Al2O3: Recombination parameters and inversion layer solar cells

(3) Werner, F a Cosceev, A b Schmidt, J a

a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH (Germany)

b LEIBNIZ UNIVERSITY HANNOVER (Germany)

Author keywords

Aluminum oxide; Capture cross section; Inversion layer solar cell; Passivation

Indexed keywords

EID: 84897145100 PISSN: 18766102 EISSN: None Source Type: Conference Proceeding
DOI: 10.1016/j.egypro.2012.07.070 Document Type: Conference Paper

Times cited : (23)

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