Passivation effects of atomic-layer-deposited aluminum oxide

EPJ Photovoltaics

Volumn 4, Issue , 2013, Pages

  Kotipalli, R ^a   Delamare, R ^a   Poncelet, O ^a   Tang, X ^a   Francis, L A ^a   Flandre, D ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM COATINGS; ALUMINUM OXIDE; AMORPHOUS MATERIALS; AMORPHOUS SILICON; ATOMS; CAPACITANCE; DIELECTRIC MATERIALS; INTERFACE STATES; LOW-K DIELECTRIC; METAL INSULATOR BOUNDARIES; MIS DEVICES; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON NITRIDE; SILICON OXIDES; SILICON SOLAR CELLS; SURFACE DEFECTS;

ATOMIC LAYER DEPOSITED; FIELD EFFECT PASSIVATION; INTERFACIAL-LAYER THICKNESS; METAL INSULATOR SEMICONDUCTOR CAPACITORS; NEGATIVE FIXED CHARGE; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITIONS (PECVD); PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SURFACE RECOMBINATION VELOCITIES;

ATOMIC LAYER DEPOSITION;

EID: 84924583731     PISSN: None     EISSN: 21050716     Source Type: Journal    
DOI: 10.1051/epjpv/2013023     Document Type: Article

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