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Volumn 5, Issue , 2015, Pages

Anisotropic thermoelectric behavior in armchair and zigzag mono-and fewlayer MoS 2 in thermoelectric generator applications

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EID: 84940830775     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep13706     Document Type: Article
Times cited : (61)

References (52)
  • 1
    • 23044442056 scopus 로고    scopus 로고
    • Two-dimensional atomic crystals
    • Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl. Acad. Sci. USA. 102, 10451-10453 (2005).
    • (2005) Proc. Natl. Acad. Sci. USA. , vol.102 , pp. 10451-10453
    • Novoselov, K.S.1
  • 2
    • 27744534165 scopus 로고    scopus 로고
    • Two-dimensional gas of massless Dirac fermions in graphene
    • Novoselov, K. S. A. et al. Two-dimensional gas of massless Dirac fermions in graphene. nature 438, 197-200 (2005).
    • (2005) Nature , vol.438 , pp. 197-200
    • Novoselov, K.S.A.1
  • 3
  • 4
    • 57549105653 scopus 로고    scopus 로고
    • MoS2 nanoribbons: High stability and unusual electronic and magnetic properties
    • Li, Y., Zhou, Z., Zhang, S., Chen, Z. MoS2 nanoribbons: High stability and unusual electronic and magnetic properties. J. Am. Chem. Soc. 130, 16739-16744 (2008).
    • (2008) J. Am. Chem. Soc. , vol.130 , pp. 16739-16744
    • Li, Y.1    Zhou, Z.2    Zhang, S.3    Chen, Z.4
  • 5
    • 79953210099 scopus 로고    scopus 로고
    • Mechanical and electronic properties of MoS2 nanoribbons and their defects
    • Ataca, C., Sahin, H., Akturk, E., Ciraci, S. Mechanical and electronic properties of MoS2 nanoribbons and their defects. J. Phys. Chem. C 115, 3934-3941 (2011).
    • (2011) J. Phys. Chem. C , vol.115 , pp. 3934-3941
    • Ataca, C.1    Sahin, H.2    Akturk, E.3    Ciraci, S.4
  • 6
    • 84867637361 scopus 로고    scopus 로고
    • Tuning magnetism and electronic phase transitions by strain and electric field in zigzag MoS2 nanoribbons
    • Kou, L. et al. Tuning magnetism and electronic phase transitions by strain and electric field in zigzag MoS2 nanoribbons. J. Phys. Chem. Lett. 3, 2934-2941 (2012).
    • (2012) J. Phys. Chem. Lett. , vol.3 , pp. 2934-2941
    • Kou, L.1
  • 7
    • 80054983584 scopus 로고    scopus 로고
    • Nature of electronic states in atomically thin MoS2 field-effect transistors
    • Ghatak, S., Pal, A. N., Ghosh, A. Nature of electronic states in atomically thin MoS2 field-effect transistors. Acs Nano 5, 7707-7712 (2011).
    • (2011) Acs Nano , vol.5 , pp. 7707-7712
    • Ghatak, S.1    Pal, A.N.2    Ghosh, A.3
  • 8
    • 84862875615 scopus 로고    scopus 로고
    • Hysteresis in single-layer MoS2 field effect transistors
    • Late, D. J., Liu, B., Matte, H. R., Dravid, V. P., Rao, C. N. R. Hysteresis in single-layer MoS2 field effect transistors. Acs Nano 6, 5635-5641 (2012).
    • (2012) Acs Nano , vol.6 , pp. 5635-5641
    • Late, D.J.1    Liu, B.2    Matte, H.R.3    Dravid, V.P.4    Rao, C.N.R.5
  • 9
    • 84859524063 scopus 로고    scopus 로고
    • Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
    • Qiu, H. et al. Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances. Appl. Phys. Lett. 100, 123104 (2012).
    • (2012) Appl. Phys. Lett. , vol.100 , pp. 123104
    • Qiu, H.1
  • 10
    • 0031143182 scopus 로고    scopus 로고
    • MS2 (M = W, Mo) photosensitive thin films for solar cells
    • Gourmelon, E. et al. MS2 (M = W, Mo) photosensitive thin films for solar cells. Sol. Energy Mater. Sol. Cells 46, 115-121 (1997).
    • (1997) Sol. Energy Mater. Sol. Cells , vol.46 , pp. 115-121
    • Gourmelon, E.1
  • 11
    • 44949200319 scopus 로고    scopus 로고
    • Enhancement of photocatalytic H2 evolution on CdS by loading MoS2 as cocatalyst under visible light irradiation
    • Zong, X. et al. Enhancement of photocatalytic H2 evolution on CdS by loading MoS2 as cocatalyst under visible light irradiation. J. Am. Chem. Soc. 130, 7176-7177 (2008).
    • (2008) J. Am. Chem. Soc. , vol.130 , pp. 7176-7177
    • Zong, X.1
  • 12
    • 77957204738 scopus 로고    scopus 로고
    • Atomically thin MoS2: A new direct-gap semiconductor
    • Mak, K. F., Lee, C., Hone, J., Shan, J., Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
    • (2010) Phys. Rev. Lett. , vol.105 , pp. 136805
    • Mak, K.F.1    Lee, C.2    Hone, J.3    Shan, J.4    Heinz, T.F.5
  • 13
    • 77951069162 scopus 로고    scopus 로고
    • Emerging photoluminescence in monolayer MoS2
    • Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271-1275 (2010).
    • (2010) Nano Lett , vol.10 , pp. 1271-1275
    • Splendiani, A.1
  • 15
    • 1542733380 scopus 로고
    • Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides
    • Kam, K. K., Parkinson, B. A. Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides. J. Phys. Chem. 86, 463-467 (1982).
    • (1982) J. Phys. Chem. , vol.86 , pp. 463-467
    • Kam, K.K.1    Parkinson, B.A.2
  • 16
    • 80052090759 scopus 로고    scopus 로고
    • Performance limits of monolayer transition metal dichalcogenide transistors. Electron Devices
    • Liu, L., Bala Kumar, S., Ouyang, Y., Guo, J. Performance limits of monolayer transition metal dichalcogenide transistors. Electron Devices IEEE Trans. On 58, 3042-3047 (2011).
    • (2011) IEEE Trans. on , vol.58 , pp. 3042-3047
    • Liu, L.1    Bala Kumar, S.2    Ouyang, Y.3    Guo, J.4
  • 17
    • 80052790285 scopus 로고    scopus 로고
    • How good can monolayer MoS2 transistors be
    • Yoon, Y., Ganapathi, K., Salahuddin, S. How good can monolayer MoS2 transistors be ? Nano Lett. 11, 3768-3773 (2011).
    • (2011) Nano Lett , vol.11 , pp. 3768-3773
    • Yoon, Y.1    Ganapathi, K.2    Salahuddin, S.3
  • 18
    • 0142180381 scopus 로고    scopus 로고
    • Textured MoS2 thin films obtained on tungsten: Electrical properties of the W/MoS2 contact
    • Gourmelon, E., Bernede, J. C., Pouzet, J., Marsillac, S. Textured MoS2 thin films obtained on tungsten: Electrical properties of the W/MoS2 contact. J. Appl. Phys. 87, 1182-1186 (2000).
    • (2000) J. Appl. Phys. , vol.87 , pp. 1182-1186
    • Gourmelon, E.1    Bernede, J.C.2    Pouzet, J.3    Marsillac, S.4
  • 19
    • 0001551754 scopus 로고    scopus 로고
    • WS2 nanotubes as tips in scanning probe microscopy
    • Rothschild, A., Cohen, S. R., Tenne, R. WS2 nanotubes as tips in scanning probe microscopy. Appl. Phys. Lett. 75, 4025-4027 (1999).
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 4025-4027
    • Rothschild, A.1    Cohen, S.R.2    Tenne, R.3
  • 20
    • 84555223620 scopus 로고    scopus 로고
    • Integrated circuits and logic operations based on single-layer MoS2
    • Radisavljevic, B., Whitwick, M. B., Kis, A. Integrated circuits and logic operations based on single-layer MoS2. Acs Nano 5, 9934-9938 (2011).
    • (2011) Acs Nano , vol.5 , pp. 9934-9938
    • Radisavljevic, B.1    Whitwick, M.B.2    Kis, A.3
  • 21
    • 84866027034 scopus 로고    scopus 로고
    • Integrated circuits based on bilayer MoS2 transistors
    • Wang, H. et al. Integrated circuits based on bilayer MoS2 transistors. Nano Lett. 12, 4674-4680 (2012).
    • (2012) Nano Lett , vol.12 , pp. 4674-4680
    • Wang, H.1
  • 22
    • 84927547956 scopus 로고    scopus 로고
    • Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain
    • Yu, S., Xiong, H. D., Eshun, K., Yuan, H., Li, Q. Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain. Appl. Surf. Sci. 325, 27-32 (2015).
    • (2015) Appl. Surf. Sci. , vol.325 , pp. 27-32
    • Yu, S.1    Xiong, H.D.2    Eshun, K.3    Yuan, H.4    Li, Q.5
  • 23
    • 79961237848 scopus 로고    scopus 로고
    • Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2
    • Kuc, A., Zibouche, N., Heine, T. Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2. Phys. Rev. B 83, 245213 (2011).
    • (2011) Phys. Rev. B , vol.83 , pp. 245213
    • Kuc, A.1    Zibouche, N.2    Heine, T.3
  • 24
    • 12944259469 scopus 로고
    • Electronic structure of MoSe2 MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy
    • Coehoorn, R. et al. Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy. Phys. Rev. B 35, 6195 (1987).
    • (1987) Phys. Rev. B , vol.35 , pp. 6195
    • Coehoorn, R.1
  • 25
    • 0033618637 scopus 로고    scopus 로고
    • Thermoelectric cooling and power generation
    • DiSalvo, F. J. Thermoelectric cooling and power generation. Science 285, 703-706 (1999).
    • (1999) Science , vol.285 , pp. 703-706
    • DiSalvo, F.J.1
  • 27
    • 34250689394 scopus 로고    scopus 로고
    • New directions for low-dimensional thermoelectric materials
    • Dresselhaus, M. S. et al. New Directions for Low-Dimensional Thermoelectric Materials. Adv. Mater. 19, 1043-1053 (2007).
    • (2007) Adv. Mater. , vol.19 , pp. 1043-1053
    • Dresselhaus, M.S.1
  • 28
    • 0001173915 scopus 로고
    • Effect of quantum-well structures on the thermoelectric figure of merit
    • Hicks, L. D., Dresselhaus, M. S. Effect of quantum-well structures on the thermoelectric figure of merit. Phys. Rev. B 47, 12727 (1993).
    • (1993) Phys. Rev. B , vol.47 , pp. 12727
    • Hicks, L.D.1    Dresselhaus, M.S.2
  • 29
    • 35949006143 scopus 로고
    • Thermoelectric figure of merit of a one-dimensional conductor
    • Hicks, L. D., Dresselhaus, M. S. Thermoelectric figure of merit of a one-dimensional conductor. Phys. Rev. B 47, 16631 (1993).
    • (1993) Phys. Rev. B , vol.47 , pp. 16631
    • Hicks, L.D.1    Dresselhaus, M.S.2
  • 30
    • 33846602674 scopus 로고    scopus 로고
    • Ultralow thermal conductivity in disordered, layered WSe2 crystals
    • Chiritescu, C. et al. Ultralow thermal conductivity in disordered, layered WSe2 crystals. Science 315, 351-353 (2007).
    • (2007) Science , vol.315 , pp. 351-353
    • Chiritescu, C.1
  • 31
    • 76449121217 scopus 로고    scopus 로고
    • MD simulations of molybdenum disulphide (MoS2): Force-field parameterization and thermal transport behavior
    • Varshney, V. et al. MD simulations of molybdenum disulphide (MoS2): Force-field parameterization and thermal transport behavior. Comput. Mater. Sci. 48, 101-108 (2010).
    • (2010) Comput. Mater. Sci. , vol.48 , pp. 101-108
    • Varshney, V.1
  • 32
    • 84880342008 scopus 로고    scopus 로고
    • Orientation dependent thermal conductance in single-layer mos2
    • Jiang, J.-W., Zhuang, X., Rabczuk, T. Orientation Dependent Thermal Conductance in Single-Layer MoS2. Sci. Rep. 3, doi:10.1038/srep02209 (2013).
    • (2013) Sci. Rep. , vol.3
    • Jiang, J.-W.1    Zhuang, X.2    Rabczuk, T.3
  • 33
    • 84893190383 scopus 로고    scopus 로고
    • Theoretical study of thermoelectric properties of MoS2
    • Huai-Hong, G., Teng, Y., Peng, T., Zhi-Dong, Z. Theoretical study of thermoelectric properties of MoS2. Chin. Phys. B 23, 017201 (2014).
    • (2014) Chin. Phys. B , vol.23 , pp. 017201
    • Huai-Hong, G.1    Teng, Y.2    Peng, T.3    Zhi-Dong, Z.4
  • 34
    • 84872079111 scopus 로고    scopus 로고
    • High pressure effect on structure, electronic structure, and thermoelectric properties of MoS2
    • Guo, H., Yang, T., Tao, P., Wang, Y., Zhang, Z. High pressure effect on structure, electronic structure, and thermoelectric properties of MoS2. J. Appl. Phys. 113, 013709 (2013).
    • (2013) J. Appl. Phys. , vol.113 , pp. 013709
    • Guo, H.1    Yang, T.2    Tao, P.3    Wang, Y.4    Zhang, Z.5
  • 35
    • 84875198364 scopus 로고    scopus 로고
    • Thermoelectric performance of MX2 (M = Mo, W; X = S, Se) monolayers
    • Huang, W., Da, H., Liang, G. Thermoelectric performance of MX2 (M = Mo, W; X = S, Se) monolayers. J. Appl. Phys. 113, 104304 (2013).
    • (2013) J. Appl. Phys. , vol.113 , pp. 104304
    • Huang Da W, H.1    Liang, G.2
  • 36
    • 79955593066 scopus 로고    scopus 로고
    • Others High thermoelectric figure of merit in heavy hole dominated PbTe
    • JeffreyáSnyder, G., others. High thermoelectric figure of merit in heavy hole dominated PbTe. Energy Environ. Sci. 4, 2085-2089 (2011).
    • (2011) Energy Environ. Sci. , vol.4 , pp. 2085-2089
    • Jeffreyásnyder, G.1
  • 37
    • 84866505161 scopus 로고    scopus 로고
    • High-performance bulk thermoelectrics with all-scale hierarchical architectures
    • Biswas, K. et al. High-performance bulk thermoelectrics with all-scale hierarchical architectures. Nature 489, 414-418 (2012).
    • (2012) Nature , vol.489 , pp. 414-418
    • Biswas, K.1
  • 38
    • 0001599371 scopus 로고
    • Thermoelectricity and thermoelectric power generation
    • Rosi, F. D. Thermoelectricity and thermoelectric power generation. Solid-State Electron. 11, 833-868 (1968).
    • (1968) Solid-State Electron , vol.11 , pp. 833-868
    • Rosi, F.D.1
  • 41
    • 8744270531 scopus 로고
    • Generalized many-channel conductance formula with application to small rings
    • Büttiker, M., Imry, Y., Landauer, R., Pinhas, S. Generalized many-channel conductance formula with application to small rings. Phys. Rev. B 31, 6207 (1985).
    • (1985) Phys. Rev. B , vol.31 , pp. 6207
    • Büttiker, M.1    Imry, Y.2    Landauer, R.3    Pinhas, S.4
  • 42
    • 84859795935 scopus 로고    scopus 로고
    • Designing electrical contacts to MoS2 monolayers: A computational study
    • Popov, I., Seifert, G., Tománek, D. Designing electrical contacts to MoS2 monolayers: a computational study. Phys. Rev. Lett. 108, 156802 (2012).
    • (2012) Phys. Rev. Lett. , vol.108 , pp. 156802
    • Popov, I.1    Seifert, G.2    Tománek, D.3
  • 44
    • 1842816907 scopus 로고
    • Special points for Brillouin-zone integrations
    • Monkhorst, H. J., Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188 (1976).
    • (1976) Phys. Rev. B , vol.13 , pp. 5188
    • Monkhorst, H.J.1    Pack, J.D.2
  • 45
    • 84888355106 scopus 로고    scopus 로고
    • Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon metal-oxide-semiconductor field effect transistor
    • Sengupta, A., Mahapatra, S. Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon metal-oxide-semiconductor field effect transistor. J. Appl. Phys. 114, 194513 (2013).
    • (2013) J. Appl. Phys. , vol.114 , pp. 194513
    • Sengupta, A.1    Mahapatra, S.2
  • 46
    • 4243754961 scopus 로고
    • Computer simulation of local order in condensed phases of silicon
    • Stillinger, F. H., Weber, T. A. Computer simulation of local order in condensed phases of silicon. Phys. Rev. B 31, 5262 (1985).
    • (1985) Phys. Rev. B , vol.31 , pp. 5262
    • Stillinger, F.H.1    Weber, T.A.2
  • 47
    • 84883434784 scopus 로고    scopus 로고
    • Molecular dynamics simulations of single-layer molybdenum disulphide (MoS2): Stillinger-Weber parametrization, mechanical properties, and thermal conductivity
    • Jiang, J.-W., Park, H. S., Rabczuk, T. Molecular dynamics simulations of single-layer molybdenum disulphide (MoS2): Stillinger-Weber parametrization, mechanical properties, and thermal conductivity. J. Appl. Phys. 114, 064307 (2013).
    • (2013) J. Appl. Phys. , vol.114 , pp. 064307
    • Jiang, J.-W.1    Park, H.S.2    Rabczuk, T.3
  • 49
    • 84863941695 scopus 로고    scopus 로고
    • Two-dimensional transition metal dichalcogenides under electron irradiation: Defect production and doping
    • Komsa, H.-P. et al. Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping. Phys. Rev. Lett. 109, 035503 (2012).
    • (2012) Phys. Rev. Lett. , vol.109 , pp. 035503
    • Komsa, H.-P.1
  • 50
    • 84884380410 scopus 로고    scopus 로고
    • Possible doping strategies for MoS2 monolayers: An ab initio study
    • Dolui, K., Rungger, I., Pemmaraju, C. D., Sanvito, S. Possible doping strategies for MoS2 monolayers: An ab initio study. Phys. Rev. B 88, 075420 (2013).
    • (2013) Phys. Rev. B , vol.88 , pp. 075420
    • Dolui, K.1    Rungger, I.2    Pemmaraju, C.D.3    Sanvito, S.4
  • 51
    • 84876406428 scopus 로고    scopus 로고
    • Functionalization of monolayer MoS2 by substitutional doping: A first-principles study
    • Yue, Q., Chang, S., Qin, S., Li, J. Functionalization of monolayer MoS2 by substitutional doping: a first-principles study. Phys. Lett. A 377, 1362-1367 (2013).
    • (2013) Phys. Lett. A , vol.377 , pp. 1362-1367
    • Yue, Q.1    Chang, S.2    Qin, S.3    Li, J.4
  • 52
    • 84921945134 scopus 로고    scopus 로고
    • Doping induces large variation in the electrical properties of MoS2 monolayers
    • Eshun, K., Xiong, H. D., Yu, S., Li, Q. Doping induces large variation in the electrical properties of MoS2 monolayers. Solid-State Electron. 106, 44-49 (2015).
    • (2015) Solid-State Electron , vol.106 , pp. 44-49
    • Eshun, K.1    Xiong, H.D.2    Yu, S.3    Li, Q.4


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