-
1
-
-
23044442056
-
Two-dimensional atomic crystals
-
Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl. Acad. Sci. USA. 102, 10451-10453 (2005).
-
(2005)
Proc. Natl. Acad. Sci. USA.
, vol.102
, pp. 10451-10453
-
-
Novoselov, K.S.1
-
2
-
-
27744534165
-
Two-dimensional gas of massless Dirac fermions in graphene
-
Novoselov, K. S. A. et al. Two-dimensional gas of massless Dirac fermions in graphene. nature 438, 197-200 (2005).
-
(2005)
Nature
, vol.438
, pp. 197-200
-
-
Novoselov, K.S.A.1
-
4
-
-
57549105653
-
MoS2 nanoribbons: High stability and unusual electronic and magnetic properties
-
Li, Y., Zhou, Z., Zhang, S., Chen, Z. MoS2 nanoribbons: High stability and unusual electronic and magnetic properties. J. Am. Chem. Soc. 130, 16739-16744 (2008).
-
(2008)
J. Am. Chem. Soc.
, vol.130
, pp. 16739-16744
-
-
Li, Y.1
Zhou, Z.2
Zhang, S.3
Chen, Z.4
-
5
-
-
79953210099
-
Mechanical and electronic properties of MoS2 nanoribbons and their defects
-
Ataca, C., Sahin, H., Akturk, E., Ciraci, S. Mechanical and electronic properties of MoS2 nanoribbons and their defects. J. Phys. Chem. C 115, 3934-3941 (2011).
-
(2011)
J. Phys. Chem. C
, vol.115
, pp. 3934-3941
-
-
Ataca, C.1
Sahin, H.2
Akturk, E.3
Ciraci, S.4
-
6
-
-
84867637361
-
Tuning magnetism and electronic phase transitions by strain and electric field in zigzag MoS2 nanoribbons
-
Kou, L. et al. Tuning magnetism and electronic phase transitions by strain and electric field in zigzag MoS2 nanoribbons. J. Phys. Chem. Lett. 3, 2934-2941 (2012).
-
(2012)
J. Phys. Chem. Lett.
, vol.3
, pp. 2934-2941
-
-
Kou, L.1
-
7
-
-
80054983584
-
Nature of electronic states in atomically thin MoS2 field-effect transistors
-
Ghatak, S., Pal, A. N., Ghosh, A. Nature of electronic states in atomically thin MoS2 field-effect transistors. Acs Nano 5, 7707-7712 (2011).
-
(2011)
Acs Nano
, vol.5
, pp. 7707-7712
-
-
Ghatak, S.1
Pal, A.N.2
Ghosh, A.3
-
8
-
-
84862875615
-
Hysteresis in single-layer MoS2 field effect transistors
-
Late, D. J., Liu, B., Matte, H. R., Dravid, V. P., Rao, C. N. R. Hysteresis in single-layer MoS2 field effect transistors. Acs Nano 6, 5635-5641 (2012).
-
(2012)
Acs Nano
, vol.6
, pp. 5635-5641
-
-
Late, D.J.1
Liu, B.2
Matte, H.R.3
Dravid, V.P.4
Rao, C.N.R.5
-
9
-
-
84859524063
-
Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
-
Qiu, H. et al. Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances. Appl. Phys. Lett. 100, 123104 (2012).
-
(2012)
Appl. Phys. Lett.
, vol.100
, pp. 123104
-
-
Qiu, H.1
-
10
-
-
0031143182
-
MS2 (M = W, Mo) photosensitive thin films for solar cells
-
Gourmelon, E. et al. MS2 (M = W, Mo) photosensitive thin films for solar cells. Sol. Energy Mater. Sol. Cells 46, 115-121 (1997).
-
(1997)
Sol. Energy Mater. Sol. Cells
, vol.46
, pp. 115-121
-
-
Gourmelon, E.1
-
11
-
-
44949200319
-
Enhancement of photocatalytic H2 evolution on CdS by loading MoS2 as cocatalyst under visible light irradiation
-
Zong, X. et al. Enhancement of photocatalytic H2 evolution on CdS by loading MoS2 as cocatalyst under visible light irradiation. J. Am. Chem. Soc. 130, 7176-7177 (2008).
-
(2008)
J. Am. Chem. Soc.
, vol.130
, pp. 7176-7177
-
-
Zong, X.1
-
12
-
-
77957204738
-
Atomically thin MoS2: A new direct-gap semiconductor
-
Mak, K. F., Lee, C., Hone, J., Shan, J., Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
-
(2010)
Phys. Rev. Lett.
, vol.105
, pp. 136805
-
-
Mak, K.F.1
Lee, C.2
Hone, J.3
Shan, J.4
Heinz, T.F.5
-
13
-
-
77951069162
-
Emerging photoluminescence in monolayer MoS2
-
Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271-1275 (2010).
-
(2010)
Nano Lett
, vol.10
, pp. 1271-1275
-
-
Splendiani, A.1
-
14
-
-
79952406873
-
Single-layer MoS2 transistors
-
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147-150 (2011).
-
(2011)
Nat. Nanotechnol.
, vol.6
, pp. 147-150
-
-
Radisavljevic, B.1
Radenovic, A.2
Brivio, J.3
Giacometti, V.4
Kis, A.5
-
15
-
-
1542733380
-
Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides
-
Kam, K. K., Parkinson, B. A. Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides. J. Phys. Chem. 86, 463-467 (1982).
-
(1982)
J. Phys. Chem.
, vol.86
, pp. 463-467
-
-
Kam, K.K.1
Parkinson, B.A.2
-
16
-
-
80052090759
-
Performance limits of monolayer transition metal dichalcogenide transistors. Electron Devices
-
Liu, L., Bala Kumar, S., Ouyang, Y., Guo, J. Performance limits of monolayer transition metal dichalcogenide transistors. Electron Devices IEEE Trans. On 58, 3042-3047 (2011).
-
(2011)
IEEE Trans. on
, vol.58
, pp. 3042-3047
-
-
Liu, L.1
Bala Kumar, S.2
Ouyang, Y.3
Guo, J.4
-
17
-
-
80052790285
-
How good can monolayer MoS2 transistors be
-
Yoon, Y., Ganapathi, K., Salahuddin, S. How good can monolayer MoS2 transistors be ? Nano Lett. 11, 3768-3773 (2011).
-
(2011)
Nano Lett
, vol.11
, pp. 3768-3773
-
-
Yoon, Y.1
Ganapathi, K.2
Salahuddin, S.3
-
18
-
-
0142180381
-
Textured MoS2 thin films obtained on tungsten: Electrical properties of the W/MoS2 contact
-
Gourmelon, E., Bernede, J. C., Pouzet, J., Marsillac, S. Textured MoS2 thin films obtained on tungsten: Electrical properties of the W/MoS2 contact. J. Appl. Phys. 87, 1182-1186 (2000).
-
(2000)
J. Appl. Phys.
, vol.87
, pp. 1182-1186
-
-
Gourmelon, E.1
Bernede, J.C.2
Pouzet, J.3
Marsillac, S.4
-
19
-
-
0001551754
-
WS2 nanotubes as tips in scanning probe microscopy
-
Rothschild, A., Cohen, S. R., Tenne, R. WS2 nanotubes as tips in scanning probe microscopy. Appl. Phys. Lett. 75, 4025-4027 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 4025-4027
-
-
Rothschild, A.1
Cohen, S.R.2
Tenne, R.3
-
20
-
-
84555223620
-
Integrated circuits and logic operations based on single-layer MoS2
-
Radisavljevic, B., Whitwick, M. B., Kis, A. Integrated circuits and logic operations based on single-layer MoS2. Acs Nano 5, 9934-9938 (2011).
-
(2011)
Acs Nano
, vol.5
, pp. 9934-9938
-
-
Radisavljevic, B.1
Whitwick, M.B.2
Kis, A.3
-
21
-
-
84866027034
-
Integrated circuits based on bilayer MoS2 transistors
-
Wang, H. et al. Integrated circuits based on bilayer MoS2 transistors. Nano Lett. 12, 4674-4680 (2012).
-
(2012)
Nano Lett
, vol.12
, pp. 4674-4680
-
-
Wang, H.1
-
22
-
-
84927547956
-
Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain
-
Yu, S., Xiong, H. D., Eshun, K., Yuan, H., Li, Q. Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain. Appl. Surf. Sci. 325, 27-32 (2015).
-
(2015)
Appl. Surf. Sci.
, vol.325
, pp. 27-32
-
-
Yu, S.1
Xiong, H.D.2
Eshun, K.3
Yuan, H.4
Li, Q.5
-
23
-
-
79961237848
-
Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2
-
Kuc, A., Zibouche, N., Heine, T. Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2. Phys. Rev. B 83, 245213 (2011).
-
(2011)
Phys. Rev. B
, vol.83
, pp. 245213
-
-
Kuc, A.1
Zibouche, N.2
Heine, T.3
-
24
-
-
12944259469
-
Electronic structure of MoSe2 MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy
-
Coehoorn, R. et al. Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy. Phys. Rev. B 35, 6195 (1987).
-
(1987)
Phys. Rev. B
, vol.35
, pp. 6195
-
-
Coehoorn, R.1
-
25
-
-
0033618637
-
Thermoelectric cooling and power generation
-
DiSalvo, F. J. Thermoelectric cooling and power generation. Science 285, 703-706 (1999).
-
(1999)
Science
, vol.285
, pp. 703-706
-
-
DiSalvo, F.J.1
-
27
-
-
34250689394
-
New directions for low-dimensional thermoelectric materials
-
Dresselhaus, M. S. et al. New Directions for Low-Dimensional Thermoelectric Materials. Adv. Mater. 19, 1043-1053 (2007).
-
(2007)
Adv. Mater.
, vol.19
, pp. 1043-1053
-
-
Dresselhaus, M.S.1
-
28
-
-
0001173915
-
Effect of quantum-well structures on the thermoelectric figure of merit
-
Hicks, L. D., Dresselhaus, M. S. Effect of quantum-well structures on the thermoelectric figure of merit. Phys. Rev. B 47, 12727 (1993).
-
(1993)
Phys. Rev. B
, vol.47
, pp. 12727
-
-
Hicks, L.D.1
Dresselhaus, M.S.2
-
29
-
-
35949006143
-
Thermoelectric figure of merit of a one-dimensional conductor
-
Hicks, L. D., Dresselhaus, M. S. Thermoelectric figure of merit of a one-dimensional conductor. Phys. Rev. B 47, 16631 (1993).
-
(1993)
Phys. Rev. B
, vol.47
, pp. 16631
-
-
Hicks, L.D.1
Dresselhaus, M.S.2
-
30
-
-
33846602674
-
Ultralow thermal conductivity in disordered, layered WSe2 crystals
-
Chiritescu, C. et al. Ultralow thermal conductivity in disordered, layered WSe2 crystals. Science 315, 351-353 (2007).
-
(2007)
Science
, vol.315
, pp. 351-353
-
-
Chiritescu, C.1
-
31
-
-
76449121217
-
MD simulations of molybdenum disulphide (MoS2): Force-field parameterization and thermal transport behavior
-
Varshney, V. et al. MD simulations of molybdenum disulphide (MoS2): Force-field parameterization and thermal transport behavior. Comput. Mater. Sci. 48, 101-108 (2010).
-
(2010)
Comput. Mater. Sci.
, vol.48
, pp. 101-108
-
-
Varshney, V.1
-
32
-
-
84880342008
-
Orientation dependent thermal conductance in single-layer mos2
-
Jiang, J.-W., Zhuang, X., Rabczuk, T. Orientation Dependent Thermal Conductance in Single-Layer MoS2. Sci. Rep. 3, doi:10.1038/srep02209 (2013).
-
(2013)
Sci. Rep.
, vol.3
-
-
Jiang, J.-W.1
Zhuang, X.2
Rabczuk, T.3
-
33
-
-
84893190383
-
Theoretical study of thermoelectric properties of MoS2
-
Huai-Hong, G., Teng, Y., Peng, T., Zhi-Dong, Z. Theoretical study of thermoelectric properties of MoS2. Chin. Phys. B 23, 017201 (2014).
-
(2014)
Chin. Phys. B
, vol.23
, pp. 017201
-
-
Huai-Hong, G.1
Teng, Y.2
Peng, T.3
Zhi-Dong, Z.4
-
34
-
-
84872079111
-
High pressure effect on structure, electronic structure, and thermoelectric properties of MoS2
-
Guo, H., Yang, T., Tao, P., Wang, Y., Zhang, Z. High pressure effect on structure, electronic structure, and thermoelectric properties of MoS2. J. Appl. Phys. 113, 013709 (2013).
-
(2013)
J. Appl. Phys.
, vol.113
, pp. 013709
-
-
Guo, H.1
Yang, T.2
Tao, P.3
Wang, Y.4
Zhang, Z.5
-
35
-
-
84875198364
-
Thermoelectric performance of MX2 (M = Mo, W; X = S, Se) monolayers
-
Huang, W., Da, H., Liang, G. Thermoelectric performance of MX2 (M = Mo, W; X = S, Se) monolayers. J. Appl. Phys. 113, 104304 (2013).
-
(2013)
J. Appl. Phys.
, vol.113
, pp. 104304
-
-
Huang Da W, H.1
Liang, G.2
-
36
-
-
79955593066
-
Others High thermoelectric figure of merit in heavy hole dominated PbTe
-
JeffreyáSnyder, G., others. High thermoelectric figure of merit in heavy hole dominated PbTe. Energy Environ. Sci. 4, 2085-2089 (2011).
-
(2011)
Energy Environ. Sci.
, vol.4
, pp. 2085-2089
-
-
Jeffreyásnyder, G.1
-
37
-
-
84866505161
-
High-performance bulk thermoelectrics with all-scale hierarchical architectures
-
Biswas, K. et al. High-performance bulk thermoelectrics with all-scale hierarchical architectures. Nature 489, 414-418 (2012).
-
(2012)
Nature
, vol.489
, pp. 414-418
-
-
Biswas, K.1
-
38
-
-
0001599371
-
Thermoelectricity and thermoelectric power generation
-
Rosi, F. D. Thermoelectricity and thermoelectric power generation. Solid-State Electron. 11, 833-868 (1968).
-
(1968)
Solid-State Electron
, vol.11
, pp. 833-868
-
-
Rosi, F.D.1
-
39
-
-
20144382034
-
-
Springer
-
Stokbro, K., Taylor, J., Brandbyge, M., Guo, H. in Introducing Molecular Electronics 117-151 (Springer, 2005).
-
(2005)
Introducing Molecular Electronics
, pp. 117-151
-
-
Stokbro, K.1
Taylor, J.2
Brandbyge, M.3
Guo, H.4
-
40
-
-
0037091644
-
Density-functional method for nonequilibrium electron transport
-
Brandbyge, M., Mozos, J.-L., Ordejón, P., Taylor, J., Stokbro, K. Density-functional method for nonequilibrium electron transport. Phys. Rev. B 65, 165401 (2002).
-
(2002)
Phys. Rev. B
, vol.65
, pp. 165401
-
-
Brandbyge, M.1
Mozos, J.-L.2
Ordejón, P.3
Taylor, J.4
Stokbro, K.5
-
41
-
-
8744270531
-
Generalized many-channel conductance formula with application to small rings
-
Büttiker, M., Imry, Y., Landauer, R., Pinhas, S. Generalized many-channel conductance formula with application to small rings. Phys. Rev. B 31, 6207 (1985).
-
(1985)
Phys. Rev. B
, vol.31
, pp. 6207
-
-
Büttiker, M.1
Imry, Y.2
Landauer, R.3
Pinhas, S.4
-
42
-
-
84859795935
-
Designing electrical contacts to MoS2 monolayers: A computational study
-
Popov, I., Seifert, G., Tománek, D. Designing electrical contacts to MoS2 monolayers: a computational study. Phys. Rev. Lett. 108, 156802 (2012).
-
(2012)
Phys. Rev. Lett.
, vol.108
, pp. 156802
-
-
Popov, I.1
Seifert, G.2
Tománek, D.3
-
43
-
-
0034229463
-
Structure and electronic properties of MoS2 nanotubes
-
Seifert, G., Terrones, H., Terrones, M., Jungnickel, G., Frauenheim, T. Structure and electronic properties of MoS2 nanotubes. Phys. Rev. Lett. 85, 146 (2000).
-
(2000)
Phys. Rev. Lett.
, vol.85
, pp. 146
-
-
Seifert, G.1
Terrones, H.2
Terrones, M.3
Jungnickel, G.4
Frauenheim, T.5
-
44
-
-
1842816907
-
Special points for Brillouin-zone integrations
-
Monkhorst, H. J., Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188 (1976).
-
(1976)
Phys. Rev. B
, vol.13
, pp. 5188
-
-
Monkhorst, H.J.1
Pack, J.D.2
-
45
-
-
84888355106
-
Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon metal-oxide-semiconductor field effect transistor
-
Sengupta, A., Mahapatra, S. Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon metal-oxide-semiconductor field effect transistor. J. Appl. Phys. 114, 194513 (2013).
-
(2013)
J. Appl. Phys.
, vol.114
, pp. 194513
-
-
Sengupta, A.1
Mahapatra, S.2
-
46
-
-
4243754961
-
Computer simulation of local order in condensed phases of silicon
-
Stillinger, F. H., Weber, T. A. Computer simulation of local order in condensed phases of silicon. Phys. Rev. B 31, 5262 (1985).
-
(1985)
Phys. Rev. B
, vol.31
, pp. 5262
-
-
Stillinger, F.H.1
Weber, T.A.2
-
47
-
-
84883434784
-
Molecular dynamics simulations of single-layer molybdenum disulphide (MoS2): Stillinger-Weber parametrization, mechanical properties, and thermal conductivity
-
Jiang, J.-W., Park, H. S., Rabczuk, T. Molecular dynamics simulations of single-layer molybdenum disulphide (MoS2): Stillinger-Weber parametrization, mechanical properties, and thermal conductivity. J. Appl. Phys. 114, 064307 (2013).
-
(2013)
J. Appl. Phys.
, vol.114
, pp. 064307
-
-
Jiang, J.-W.1
Park, H.S.2
Rabczuk, T.3
-
49
-
-
84863941695
-
Two-dimensional transition metal dichalcogenides under electron irradiation: Defect production and doping
-
Komsa, H.-P. et al. Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping. Phys. Rev. Lett. 109, 035503 (2012).
-
(2012)
Phys. Rev. Lett.
, vol.109
, pp. 035503
-
-
Komsa, H.-P.1
-
50
-
-
84884380410
-
Possible doping strategies for MoS2 monolayers: An ab initio study
-
Dolui, K., Rungger, I., Pemmaraju, C. D., Sanvito, S. Possible doping strategies for MoS2 monolayers: An ab initio study. Phys. Rev. B 88, 075420 (2013).
-
(2013)
Phys. Rev. B
, vol.88
, pp. 075420
-
-
Dolui, K.1
Rungger, I.2
Pemmaraju, C.D.3
Sanvito, S.4
-
51
-
-
84876406428
-
Functionalization of monolayer MoS2 by substitutional doping: A first-principles study
-
Yue, Q., Chang, S., Qin, S., Li, J. Functionalization of monolayer MoS2 by substitutional doping: a first-principles study. Phys. Lett. A 377, 1362-1367 (2013).
-
(2013)
Phys. Lett. A
, vol.377
, pp. 1362-1367
-
-
Yue, Q.1
Chang, S.2
Qin, S.3
Li, J.4
-
52
-
-
84921945134
-
Doping induces large variation in the electrical properties of MoS2 monolayers
-
Eshun, K., Xiong, H. D., Yu, S., Li, Q. Doping induces large variation in the electrical properties of MoS2 monolayers. Solid-State Electron. 106, 44-49 (2015).
-
(2015)
Solid-State Electron
, vol.106
, pp. 44-49
-
-
Eshun, K.1
Xiong, H.D.2
Yu, S.3
Li, Q.4
|