Doping induces large variation in the electrical properties of MoS2 monolayers

Solid-State Electronics

Volumn 106, Issue , 2015, Pages 44-49

  Eshun, Kwesi ^a   Xiong, Hao D ^b   Yu, Sheng ^a   Li, Qiliang ^a  

^a Krasnow Institute for Advanced Study   (United States)

^b SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Doping; MOSFET; Nanomaterials; Semiconductor; Two dimensional materials

Indexed keywords

DOPING (ADDITIVES); ENERGY GAP; INTEGRATED CIRCUITS; MOLYBDENUM COMPOUNDS; MONOLAYERS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SEMICONDUCTOR MATERIALS;

DEVICE VARIATIONS; DOPANT NUMBERS; DOPING EFFECTS; LAYERED SEMICONDUCTORS; LOW DIMENSIONAL; MOS-FET; TWO-DIMENSIONAL MATERIALS; TWO-DIMENSIONAL SEMICONDUCTORS;

SEMICONDUCTOR DOPING;

EID: 84921945134     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2015.01.002     Document Type: Article

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