Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain

Applied Surface Science

Volumn 325, Issue C, 2015, Pages 27-32

  Yu, Sheng ^a   Xiong, Hao D ^b,c   Eshun, Kwesi ^a   Yuan, Hui ^a,c   Li, Qiliang ^a  

^a George Mason University   (United States)

^b SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Mobility enhancement; MoS2 monolayer; Phase transition; Strain effect; Two dimensional materials

Indexed keywords

COMPUTATION THEORY; HALL MOBILITY; HOLE MOBILITY; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; PHASE TRANSITIONS; SULFUR COMPOUNDS;

BAND-GAP STRUCTURES; COMPUTATIONAL STUDIES; DEFORMATION POTENTIAL THEORY; ELECTRON EFFECTIVE MASS; INCREASING TEMPERATURES; MOBILITY ENHANCEMENT; STRAIN EFFECT; TWO-DIMENSIONAL MATERIALS;

TENSILE STRAIN;

EID: 84927547956     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.11.079     Document Type: Article

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