Low-Temperature High-Mobility Amorphous IZO for Silicon Heterojunction Solar Cells

IEEE Journal of Photovoltaics

Volumn 5, Issue 5, 2015, Pages 1340-1347

  Morales Masis, Monica ^a   Martin De Nicolas, Silvia ^a   Holovsky, Jakub ^b,c   De Wolf, Stefaan ^a   Ballif, Christophe ^a  

^a EPFL   (Switzerland)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

Amorphous indium zinc oxide; electron mobility; heterojunction; indium tin oxide (ITO); silicon; solar cells; transparent conductive oxides (TCOs); Urbach energy

Indexed keywords

ELECTRODES; ELECTRON MOBILITY; HALL MOBILITY; HETEROJUNCTIONS; INDIUM; OXIDE FILMS; SILICON; SILICON SOLAR CELLS; SOLAR CELLS; TEMPERATURE; TIN; TIN OXIDES; ZINC; ZINC OXIDE;

AMORPHOUS INDIUM ZINC OXIDE (A-IZO); INDIUM TIN OXIDE; INDIUM ZINC OXIDES; LOW SUBSTRATE TEMPERATURE; OPTICAL AND ELECTRICAL PROPERTIES; TRANSPARENT CONDUCTIVE OXIDE (TCOS); TRANSPARENT CONDUCTIVE OXIDES; URBACH ENERGY; FREE CARRIER ABSORPTION;

AMORPHOUS SILICON;

EID: 84940047955     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2015.2450993     Document Type: Article

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