Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells

Solar Energy Materials and Solar Cells

Volumn 115, Issue , 2013, Pages 151-156

  Barraud, L ^a   Holman, Z C ^a   Badel, N ^a   Reiss, P ^a,b   Descoeudres, A ^a   Battaglia, C ^a   De Wolf, S ^a   Ballif, C ^a  

^a EPFL   (Switzerland)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Contact resistance; Indium oxide; Indium tin oxide; Silicon heterojunction; Solar cell; Transparent conductive oxide

Indexed keywords

ELECTRICAL LOSS; FREE CARRIER ABSORPTION; HIGH-EFFICIENCY; INDIUM OXIDE; INDIUM TIN OXIDE; INDIUM TIN OXIDE LAYERS; SILICON HETEROJUNCTIONS; TRANSPARENT CONDUCTIVE OXIDES;

CONTACT RESISTANCE; ELECTRON MOBILITY; HETEROJUNCTIONS; HYDROGEN; INDIUM; SHEET RESISTANCE; SILICON; TIN; TIN OXIDES;

SOLAR CELLS;

EID: 84876962483     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.03.024     Document Type: Article

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