In situ hall effect monitoring of vacuum annealing of In2O3:H thin films

Materials

Volumn 8, Issue 2, 2015, Pages 561-574

  Wardenga, Hans F ^a   Frischbier, Mareike V ^a   Morales Masis, Monica ^b   Klein, Andreas ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b EPFL   (Switzerland)

Author keywords

Grain boundary passivation; H doped indium oxide; Hall effect; Hydrogen; X ray photoelectron spectroscopy (XPS)

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; DEPOSITION; GRAIN BOUNDARIES; HALL EFFECT; HALL MOBILITY; HYDROGEN; INDIUM; LIGHT TRANSMISSION; PASSIVATION; PHOTOELECTRONS; PHOTONS; THIN FILMS; X RAY DIFFRACTION;

ANNEALING TEMPERATURES; EFFECT MONITORING; HALL EFFECT MEASUREMENT; HIGH MOBILITY; HYDROGEN PASSIVATION; INDIUM OXIDE; ROOM TEMPERATURE; VACUUM-ANNEALING;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84923816168     PISSN: None     EISSN: 19961944     Source Type: Journal    
DOI: 10.3390/ma8020561     Document Type: Article

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