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Volumn , Issue , 2011, Pages

Graphene electronics for RF applications

Author keywords

chemical vapor deposition; frequency multiplier; graphene; RF applications

Indexed keywords

CARBON ATOMS; CUT-OFF; ELECTRONIC DEVICE; FREQUENCY MULTIPLIER; FUTURE CHALLENGES; GRAPHENE TRANSISTORS; HONEYCOMB LATTICES; MAXIMUM FREQUENCY; NEW DEVICES; RADIO FREQUENCIES; RECENT PROGRESS; RF APPLICATIONS; RF COMMUNICATION;

EID: 80052327305     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2011.5972917     Document Type: Conference Paper
Times cited : (2)

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  • 8
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    • Compact Virtual-Source Current-Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors
    • in press
    • H. Wang, A. Hsu, J. Kong, D. Antoniadis, and T. Palacios, "Compact Virtual-Source Current-Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors" IEEE Trans. Electron Devices, 2011, in press.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.