Electrostatically doped WSe2 CMOS inverter

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2014, Pages 185-186

  Das, Saptarshi ^a   Roelofs, Andreas ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATICS; SILICON; WORK FUNCTION;

CHANNEL MATERIALS; DRIVE CURRENTS; ELECTROSTATIC DOPING; HOLE CONDUCTION; SEMICONDUCTING TRANSITION; TRANSISTOR GEOMETRIES; TRUE POTENTIALS; WORK FUNCTION ENGINEERINGS;

SEMICONDUCTING SILICON;

EID: 84906537281     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2014.6872359     Document Type: Conference Paper

References (5)

1. Das, S. et al., Evaluating the Scalability of Multilayer MoS2 FET. Device Research Conference DRC (2013).
2. Das, S. et al., High Performance Multilayer MoS2 Transistor with Scandium Contacts. Nano Letters 13,100, (2013).
3. Liu, H. et al., Channel Length Scaling of MoS2 MOSFETs, ACS Nano 10, 8563, (2012).
4. Wang, H. et al., Integrated Circuit Based on Bilayer MoS2 Transistors.
5. Das, S. et al., WSe2 FET with Enhanced Ambipolar Characteristics. Applied Physics Letters 103,103501, (2013).