Trimethylaluminum and Oxygen Atomic Layer Deposition on Hydroxyl-Free Cu(111)

ACS Applied Materials and Interfaces

Volumn 7, Issue 30, 2015, Pages 16428-16439

  Gharachorlou, Amir ^a   Detwiler, Michael D ^a   Gu, Xiang Kui ^a   Mayr, Lukas ^a,b   Klötzer, Bernhard ^b   Greeley, Jeffrey ^a   Reifenberger, Ronald G ^a,c   Delgass, W Nicholas ^a   Ribeiro, Fabio H ^a   Zemlyanov, Dmitry Y ^a  

^a Purdue University   (United States)

^b UNIVERSITY OF INNSBRUCK   (Austria)

^c PURDUE UNIVERSITY   (United States)

Author keywords

atomic layer deposition (ALD); Cu(111); high resolution electron energy loss spectroscopy (HREELS); scanning tunneling microscopy (STM); single crystal; surface science; trimethylaluminum (TMA); X ray photoelectron spectroscopy (XPS)

Indexed keywords

ALUMINA; ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; CARBON; DENSITY FUNCTIONAL THEORY; DEPOSITION; DIFFUSION COATINGS; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ENERGY DISSIPATION; HYDROGENATION; MICROELECTRONICS; OXIDE FILMS; OXIDES; OXYGEN; PROTECTIVE COATINGS; SCANNING TUNNELING MICROSCOPY; SHEET METAL; SINGLE CRYSTALS; SINTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM OXIDE SURFACES; CU(1 1 1); HIGH-RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; LIQUID-PHASE HYDROGENATION; OCTAHEDRALLY COORDINATED; SURFACE SCIENCE; TRIMETHYLALUMINUM; TWO-DIMENSIONAL (2D) ISLANDS;

COPPER;

EID: 84938629676     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b03598     Document Type: Article

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