Vapor-phase growth and characterization of Mo1-xW xS2 (0 ≤ x ≤ 1) atomic layers on 2-inch sapphire substrates

Nanoscale

Volumn 6, Issue 1, 2014, Pages 624-629

  Liu, Hongfei ^a   Antwi, K K Ansah ^b   Chua, Soojin ^a   Chi, Dongzhi ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE SUBSTRATES; CO-SPUTTERING TECHNIQUES; MECHANICAL EXFOLIATION; OPTICAL ABSORBANCE; SAPPHIRE SUBSTRATES; TERNARY COMPOUNDS; TWO-MODE BEHAVIOR; VAPOR PHASE GROWTH;

ATOMIC FORCE MICROSCOPY; BINDING ENERGY; DATA STORAGE EQUIPMENT; ENERGY GAP; MONOLAYERS; PHONONS; PHOTOELECTRONS; SAPPHIRE; TERNARY ALLOYS; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

TUNGSTEN COMPOUNDS;

EID: 84890173911     PISSN: 20403364     EISSN: 20403372     Source Type: Journal    
DOI: 10.1039/c3nr04515c     Document Type: Article

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