Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS2/Graphene Schottky Junction

ACS Applied Materials and Interfaces

Volumn 7, Issue 28, 2015, Pages 15206-15213

  Vabbina, Phanikiran ^a   Choudhary, Nitin ^b   Chowdhury, Al Amin ^a   Sinha, Raju ^a   Karabiyik, Mustafa ^a   Das, Santanu ^b   Choi, Wonbong ^b   Pala, Nezih ^a  

^a Florida International University   (United States)

^b UNIVERSITY OF NORTH TEXAS   (United States)

Author keywords

2D hybrid materials; atomic layer MoS2; CVD; graphene; photodetector; Schottky junction

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ENERGY GAP; GRAPHENE; HYBRID MATERIALS; LAYERED SEMICONDUCTORS; LIGHT ABSORPTION; OPTICAL PROPERTIES; PHOTODETECTORS; PHOTONS; SCHOTTKY BARRIER DIODES; SULFUR COMPOUNDS;

ATOMIC LAYER; ELECTRICAL AND OPTICAL PROPERTIES; INTERNAL PHOTOEMISSION; LUMINESCENCE QUANTUM YIELDS; NOISE EQUIVALENT POWER; SCHOTTKY JUNCTIONS; SCHOTTKY PHOTODETECTORS; WAVELENGTH SELECTIVITY;

MOLYBDENUM COMPOUNDS;

EID: 84937676588     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b00887     Document Type: Article

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