A silicon compatible resonant cavity enhanced photodetector working at 1.55 νm

Semiconductor Science and Technology

Volumn 23, Issue 7, 2008, Pages

  Casalino, M ^a   Sirleto, L ^a   Moretti, L ^b   Rendina, I ^a  

^a CNR   (Italy)

^b UNIVERSITY MEDITERRANEA OF REGGIO CALABRIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAVITY RESONATORS; COPPER; GOLD; METALS; NONMETALS; OPTOELECTRONIC DEVICES; SCHOTTKY BARRIER DIODES; SILICON; SILVER; TELECOMMUNICATION SYSTEMS; TRANSIT TIME DEVICES;

3 DB BANDWIDTH; BANDWIDTH EFFICIENCY (BWE); CARRIER (CO); IMAGE FORCES; INTERNAL PHOTOEMISSION (IPE); METAL LAYERS; RESONANT-CAVITY-ENHANCED (RCE); RESONANT-CAVITY-ENHANCED (RCE) PHOTODETECTORS; ROOM-TEMPERATURE (RT); SCHOTTKY BARRIER (SB); SILICON PHOTO-DETECTOR; TRANSIT TIME (TT);

PHOTODETECTORS;

EID: 47749115371     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/7/075001     Document Type: Article

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