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Volumn 117, Issue 20, 2015, Pages

Hydrogenated indium oxide window layers for high-efficiency Cu(In,Ga)Se2 solar cells

(9) Jäger, Timo a Romanyuk, Yaroslav E a Nishiwaki, Shiro a Bissig, Benjamin a Pianezzi, Fabian a Fuchs, Peter a Gretener, Christina a Döbeli, Max b Tiwari, Ayodhya N a

a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY (Switzerland)

b ETH ZURICH (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHOUS FILMS; COPPER; GALLIUM; HYDROGENATION; INDIUM; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; THIN FILMS; ZINC OXIDE;

DOPING GRADIENTS; ELASTIC RECOIL DETECTION ANALYSIS; HIGH ELECTRON MOBILITY; HIGH-EFFICIENCY; HYDROGEN CONCENTRATION; OVERALL POWER CONVERSION EFFICIENCY; ROOM TEMPERATURE; SPUTTER PROCESS;

SOLAR CELLS;

EID: 84930074424 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4921445 Document Type: Article

Times cited : (41)

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