The stability and performance of amorphous-InZnO within CIGS devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7771, Issue , 2010, Pages

  Gennett, Thomas ^a   Perkins, John D ^a   Repins, Ingrid L ^a   Sundaramoorthy, Rajalakshmi ^a   Ginley, David S ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

CIGS; InZnO; TCO

Indexed keywords

AMORPHOUS METALS; BI-LAYER; CHEMICAL BARRIERS; CIGS; DAMP HEAT; ELECTRICAL CONTACTS; INDIUM ZINC OXIDES; INZNO; METAL OXIDES; OPTOELECTRONIC PROPERTIES; OXYGEN STOICHIOMETRY; PERFORMANCE PARAMETERS; TCO; THIN FILM PHOTOVOLTAICS; THREE-STAGE PROCESS; TUNABLE CONDUCTIVITY; ZNO;

ELECTRONIC PROPERTIES; METALLIC COMPOUNDS; OXYGEN; STOICHIOMETRY; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

ANTIREFLECTION COATINGS;

EID: 78049365438     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.861043     Document Type: Conference Paper

References (5)

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