Sub-bandgap photoconductivity and photocapacitance in CIGS thin films and devices

Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7489-7492

  Igalson, M ^a   Urbaniak, A ^a   Krysztopa, A ^a   Aida, Y ^b,c   Caballero, R ^d   Edoff, M ^e   Siebentritt, S ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b TDK CORPORATION   (Japan)

^c UNIVERSITY OF LUXEMBOURG   (Luxembourg)

^d HAHN MEITNER INSTITUT   (Germany)

^e UPPSALA UNIVERSITY   (Sweden)

Author keywords

CIGS; Defect levels; Photocapacitance; Photoconductivity

Indexed keywords

ANTIBONDING; CIGS; CIGS THIN FILMS; CU(IN , GA)SE2; CUGASE2 THIN FILMS; DEFECT LEVELS; DIVACANCIES; META-STABLE STATE; MODEL-BASED OPC; NATIVE DEFECT; NEGATIVE-U; PHOTOCAPACITANCE; VOLTAGE BIAS;

COPPER; DEFECTS; ENERGY GAP; GALLIUM; OPTICAL TRANSITIONS; PHOTOCONDUCTIVITY; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS;

PHOTOELECTRICITY;

EID: 80052186355     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.179     Document Type: Conference Paper

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