Low temperature, high conductivity Al-doped ZnO film fabrication using modified facing target sputtering

Thin Solid Films

Volumn 587, Issue , 2015, Pages 88-93

  Kim, Jay Bum ^a   Jin, Su Bong ^a   Wen, Long ^a   Premphet, P ^b   Leksakul, K ^b   Han, Jeon Geon ^a  

^a Sungkyunkwan University   (South Korea)

^b CHIANG MAI UNIVERSITY   (Thailand)

Author keywords

Aluminum doped zinc oxide; Facing target sputtering; Low temperature process; Sputtering; Transparent conductive oxide

Indexed keywords

ALUMINUM OXIDE; CRYSTALLINITY; DEPOSITION RATES; FABRICATION; FACINGS; HALL MOBILITY; HOLE MOBILITY; HYDROGEN; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL EMISSION SPECTROSCOPY; OPTICAL FILMS; OXIDE MINERALS; SEMICONDUCTOR DOPING; TEMPERATURE; TRANSPARENT CONDUCTING OXIDES; TRANSPARENT ELECTRODES; ZINC OXIDE;

ALUMINUM-DOPED ZINC OXIDE; FACING TARGET SPUTTERING; HIGH DEPOSITION RATES; LOW PROCESS TEMPERATURE; LOW- TEMPERATURE PROCESS; MAGNETIC FIELD SIMULATION; TRANSPARENT CONDUCTIVE OXIDES; UNIFORM MAGNETIC FIELDS;

SPUTTERING;

EID: 84929291825     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2015.01.061     Document Type: Article

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