Tunable ultraviolet photoresponse in solution-processed p-n junction photodiodes based on transition-metal oxides

ACS Applied Materials and Interfaces

Volumn 7, Issue 18, 2015, Pages 9660-9667

  Xie, Ting ^a,b   Liu, Guannan ^a,b,c   Wen, Baomei ^a   Ha, Jong Y ^a,c   Nguyen, Nhan V ^a   Motayed, Abhishek ^a,c   Debnath, Ratan ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c University of Maryland   (United States)

Author keywords

NiO; photodetector; TMO; Zn1 x< inf>Mgx< inf>O

Indexed keywords

HETEROJUNCTIONS; OPTICAL PROPERTIES; PHOTODETECTORS; PHOTODIODES; PHOTONS; TRANSITION METAL COMPOUNDS; TRANSITION METALS; X RAY ANALYSIS; ZINC;

COMPOSITIONAL NON UNIFORMITIES; N-TYPE SEMICONDUCTORS; NIO; P-N JUNCTION PHOTODIODE; TMO; TRANSITION-METAL OXIDES; TUNABLE ULTRAVIOLETS; ULTRAVIOLET ILLUMINATION;

SEMICONDUCTOR JUNCTIONS;

EID: 84929223593     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b01420     Document Type: Article

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