Investigation of phase segregation in sol-gel derived ZnMgO thin films

Semiconductor Science and Technology

Volumn 28, Issue 2, 2013, Pages

  Singh, Amanpal ^a,b   Vij, Ankush ^c,d   Kumar, Dinesh ^a   Khanna, P K ^b   Kumar, Mukesh ^a   Gautam, Sanjeev ^c   Chae, K H ^c  

^a KURUKSHETRA UNIVERSITY   (India)

^b CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

^c Korea Institute of Science and Technology   (South Korea)

^d NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS BEHAVIOR; BAND-GAP TUNING; BLUE SHIFTING; ELECTRICAL RESISTIVITY; ELECTRICAL RESISTIVITY OF THIN FILMS; ELEMENT SPECIFIC; FINE STRUCTURES; GRAIN SIZE; MG CONTENT; MG-DOPING; MULTILAYERED THIN FILMS; NANOSIZED GRAINS; NEAR BAND EDGE; O K-EDGES; P-TYPE SI; PHASE SEGREGATIONS; PL EMISSION; SPHERICAL SHAPE; WURTZITE STRUCTURE; WURTZITES; ZNMGO THIN FILMS;

ATOMIC FORCE MICROSCOPY; DEPOSITS; ELECTRIC CONDUCTIVITY; PHASE SEPARATION; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; SOL-GELS; X RAY DIFFRACTION; ZINC; ZINC SULFIDE;

THIN FILMS;

EID: 84872809304     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/2/025004     Document Type: Article

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