Zn1-χMgχO homojunction-based ultraviolet photodetector

IEEE Photonics Technology Letters

Volumn 21, Issue 13, 2009, Pages 887-889

  Shukla, Gaurav ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

Author keywords

P n junction; Photodiode; Pulsed laser deposition (PLD); Ultraviolet (UV) photodetector; Zn1 Mg O

Indexed keywords

CUTOFF WAVELENGTHS; DOUBLE LAYERS; HEXAGONAL WURTZITE STRUCTURE; HOMOJUNCTION; MG CONTENT; P-N JUNCTION; P-TYPE CONTACT; PULSED-LASER DEPOSITION TECHNIQUE; REJECTION RATIOS; SAPPHIRE SUBSTRATES; SINGLE PHASE; THREE ORDERS OF MAGNITUDE; ULTRA-VIOLET PHOTODETECTORS; ULTRAVIOLET (UV) PHOTODETECTOR;

CORUNDUM; HETEROJUNCTION BIPOLAR TRANSISTORS; LASERS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTODIODES; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; SEMICONDUCTOR JUNCTIONS; VACUUM EVAPORATION; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

ZINC;

EID: 67649631556     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2020060     Document Type: Article

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