SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 117, Issue 18, 2015, Pages

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

(4) Browne, David A a Mazumder, Baishakhi a,b Wu, Yuh Renn c Speck, James S a

a University of California (United States)

b OAK RIDGE NATIONAL LABORATORY (United States)

c NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDUCED POLARIZATION LOGGING; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; POLARIZATION; QUANTUM CHEMISTRY; SAPPHIRE; SEMICONDUCTOR ALLOYS;

ALLOY FLUCTUATION; ATOM PROBE TOMOGRAPHY; COMPOSITIONAL FLUCTUATIONS; COMPOSITIONAL VARIATION; ELECTRON TRANSPORT; MULTIPLE QUANTUM-WELL STRUCTURES; SAPPHIRE TEMPLATES; TEMPERATURE DEPENDENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84929164247 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4919750 Document Type: Article

Times cited : (53)

References (27)

1
- 0029346154
- S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys., Part 2 34, L797 (1995). 10.1143/JJAP.34.L797
- (1995) Jpn. J. Appl. Phys., Part 2 , vol.34 , pp. L797
- Nakamura, S.¹ Senoh, M.² Iwasa, N.³ Nagahama, S.⁴

2
- 0029779805
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys., Part 2 35, L74 (1996). 10.1143/JJAP.35.L74
- (1996) Jpn. J. Appl. Phys., Part 2 , vol.35 , pp. L74
- Nakamura, S.¹ Senoh, M.² Nagahama, S.³ Iwasa, N.⁴ Yamada, T.⁵ Matsushita, T.⁶ Kiyoku, H.⁷ Sugimoto, Y.⁸

3
- 73349142666
- A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, IEEE Trans. Electron Devices 57, 79 (2010). 10.1109/TED.2009.2035538
- (2010) IEEE Trans. Electron Devices , vol.57 , pp. 79
- Laubsch, A.¹ Sabathil, M.² Baur, J.³ Peter, M.⁴ Hahn, B.⁵

4
- 78249285254
- Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, J. Phys. D: Appl. Phys. 43, 354002 (2010). 10.1088/0022-3727/43/35/354002
- (2010) J. Phys. D: Appl. Phys. , vol.43
- Narukawa, Y.¹ Ichikawa, M.² Sanga, D.³ Sano, M.⁴ Mukai, T.⁵

5
- 70349316517
- J. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, IEEE J. Sel. Top. Quantum Electron. 15, 1080 (2009). 10.1109/JSTQE.2009.2014170
- (2009) IEEE J. Sel. Top. Quantum Electron. , vol.15 , pp. 1080
- Ryou, J.¹ Yoder, P.D.² Liu, J.³ Lochner, Z.⁴ Kim, H.⁵ Choi, S.⁶ Kim, H.J.⁷ Dupuis, R.D.⁸

6
- 38949146387
- A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, Appl. Phys. Lett. 92, 053502 (2008). 10.1063/1.2839305
- (2008) Appl. Phys. Lett. , vol.92
- David, A.¹ Grundmann, M.J.² Kaeding, J.F.³ Gardner, N.F.⁴ Mihopoulos, T.G.⁵ Krames, M.R.⁶

7
- 79959529122
- J. H. J. Zhu, S. M. Zhang, H. Wang, D. G. Zhao, J. H. J. Zhu, Z. S. Liu, D. S. Jiang, Y. X. Qiu, and H. Yang, J. Appl. Phys. 109, 093117 (2011). 10.1063/1.3587176
- (2011) J. Appl. Phys. , vol.109
- Zhu, J.H.J.¹ Zhang, S.M.² Wang, H.³ Zhao, D.G.⁴ Zhu, J.H.J.⁵ Liu, Z.S.⁶ Jiang, D.S.⁷ Qiu, Y.X.⁸ Yang, H.⁹

8
- 84857597112
- K. A. Bulashevich, O. V. Khokhlev, I. Y. Evstratov, and S. Y. Karpov, Proc. SPIE 8278, 827819 (2012). 10.1117/12.912305
- (2012) Proc. SPIE , vol.8278
- Bulashevich, K.A.¹ Khokhlev, O.V.² Evstratov, I.Y.³ Karpov, S.Y.⁴

9
- 79955787136
- C.
- S. Y. Karpov, Proc. SPIE 7939, 79391 C (2011). 10.1117/12.872842
- (2011) Proc. SPIE , vol.7939 , pp. 79391
- Karpov, S.Y.¹

10
- 84907311226
- P. M. McBride, Q. Yan, and C. G. Van de Walle, Appl. Phys. Lett. 105, 083507 (2014). 10.1063/1.4894464
- (2014) Appl. Phys. Lett. , vol.105
- McBride, P.M.¹ Yan, Q.² Van De Walle, C.G.³

11
- 33846988235
- M. J. Galtrey, R. a. Oliver, M. J. Kappers, C. J. Humphreys, D. J. Stokes, P. H. Clifton, and A. Cerezo, Appl. Phys. Lett. 90, 061903 (2007). 10.1063/1.2431573
- (2007) Appl. Phys. Lett. , vol.90
- Galtrey, M.J.¹ Oliver, R.A.² Kappers, M.J.³ Humphreys, C.J.⁴ Stokes, D.J.⁵ Clifton, P.H.⁶ Cerezo, A.⁷

12
- 84865506014
- Y.-R. Wu, R. Shivaraman, K.-C. Wang, and J. S. Speck, Appl. Phys. Lett. 101, 083505 (2012). 10.1063/1.4747532
- (2012) Appl. Phys. Lett. , vol.101
- Wu, Y.-R.¹ Shivaraman, R.² Wang, K.-C.³ Speck, J.S.⁴

13
- 84879864639
- R. Shivaraman, Y. Kawaguchi, S. Tanaka, S. P. DenBaars, S. Nakamura, and J. S. Speck, Appl. Phys. Lett. 102, 251104 (2013). 10.1063/1.4812363
- (2013) Appl. Phys. Lett. , vol.102
- Shivaraman, R.¹ Kawaguchi, Y.² Tanaka, S.³ Denbaars, S.P.⁴ Nakamura, S.⁵ Speck, J.S.⁶

14
- 84907228749
- T.-J. Yang, R. Shivaraman, J. S. Speck, and Y.-R. Wu, J. Appl. Phys. 116, 113104 (2014). 10.1063/1.4896103
- (2014) J. Appl. Phys. , vol.116
- Yang, T.-J.¹ Shivaraman, R.² Speck, J.S.³ Wu, Y.-R.⁴

15
- 0642275027
- F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997). 10.1103/PhysRevB.56.R10024
- (1997) Phys. Rev. B , vol.56 , pp. R10024
- Bernardini, F.¹ Fiorentini, V.² Vanderbilt, D.³

16
- 0001269399
- V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, Phys. Rev. B 60, 8849 (1999). 10.1103/PhysRevB.60.8849
- (1999) Phys. Rev. B , vol.60 , pp. 8849
- Fiorentini, V.¹ Bernardini, F.² Della Sala, F.³ Di Carlo, A.⁴ Lugli, P.⁵

17
- 36449009352
- G. Martin, A. Botchkarev, A. Rockett, and H. Morkoc, Appl. Phys. Lett. 68, 2541 (1996). 10.1063/1.116177
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2541
- Martin, G.¹ Botchkarev, A.² Rockett, A.³ Morkoc, H.⁴

18
- 58149465739
- S. J. Leem, Y. C. Shin, E. H. Kim, C. M. Kim, B. G. Lee, Y. Moon, I. H. Lee, and T. G. Kim, Semicond. Sci. Technol. 23, 125039 (2008). 10.1088/0268-1242/23/12/125039
- (2008) Semicond. Sci. Technol. , vol.23
- Leem, S.J.¹ Shin, Y.C.² Kim, E.H.³ Kim, C.M.⁴ Lee, B.G.⁵ Moon, Y.⁶ Lee, I.H.⁷ Kim, T.G.⁸

19
- 84908065923
- L. Mancini, N. Amirifar, D. Shinde, I. Blum, M. Gilbert, A. Vella, W. Lefebvre, R. Larde, E. Talbot, P. Pareige, X. Portier, A. Ziani, C. Davesnne, C. Durand, J. Eymery, N. Grandjean, and L. Rigutti, J. Phys. Chem. C 118, 24136 (2014). 10.1021/jp5071264
- (2014) J. Phys. Chem. C , vol.118 , pp. 24136
- Mancini, L.¹ Amirifar, N.² Shinde, D.³ Blum, I.⁴ Gilbert, M.⁵ Vella, A.⁶ Lefebvre, W.⁷ Larde, R.⁸ Talbot, E.⁹ Pareige, P.¹⁰ Portier, X.¹¹ Ziani, A.¹² Davesnne, C.¹³ Durand, C.¹⁴ Eymery, J.¹⁵ Grandjean, N.¹⁶ Rigutti, L.¹⁷

20
- 80053959767
- D. S. Sizov, R. Bhat, A. Zakharian, K. Song, D. E. Allen, S. Coleman, and C. Zah, IEEE J. Quantum Electron. 17, 1390 (2011). 10.1109/JSTQE.2011.2116770
- (2011) IEEE J. Quantum Electron. , vol.17 , pp. 1390
- Sizov, D.S.¹ Bhat, R.² Zakharian, A.³ Song, K.⁴ Allen, D.E.⁵ Coleman, S.⁶ Zah, C.⁷

21
- 0004005306
- 3rd ed. (John Wiley & Sons, Inc., Hoboken, NJ)
- S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (John Wiley & Sons, Inc., Hoboken, NJ, 2007).
- (2007) Physics of Semiconductor Devices
- Sze, S.M.¹ Ng, K.K.²

22
- 0019534311
- A. C. Gossard, W. Brown, C. L. Allyn, and W. Wiegmann, J. Vac. Sci. Technol. 20, 694 (1982). 10.1116/1.571633
- (1982) J. Vac. Sci. Technol. , vol.20 , pp. 694
- Gossard, A.C.¹ Brown, W.² Allyn, C.L.³ Wiegmann, W.⁴

23
- 84875634930
- H. Zhao, G. Liu, J. Zhang, R. A. Arif, and N. Tansu, J. Disp. Technol. 9, 212 (2013). 10.1109/JDT.2013.2250252
- (2013) J. Disp. Technol. , vol.9 , pp. 212
- Zhao, H.¹ Liu, G.² Zhang, J.³ Arif, R.A.⁴ Tansu, N.⁵

24
- 84885587908
- I. A. Prudaev, I. Y. Golygin, S. B. Shirapov, I. S. Romanov, S. S. Khludkov, and O. P. Tolbanov, Semiconductors 47, 1382 (2013). 10.1134/S1063782613100230
- (2013) Semiconductors , vol.47 , pp. 1382
- Prudaev, I.A.¹ Golygin, I.Y.² Shirapov, S.B.³ Romanov, I.S.⁴ Khludkov, S.S.⁵ Tolbanov, O.P.⁶

25
- 84929431383
- F. Liu, L. Huang, R. F. Davis, L. M. Porter, D. K. Schreiber, S. V. N. T. Kuchibatla, V. Shutthanandan, S. Thevuthasan, E. A. Preble, T. Paskova, and K. R. Evans, J. Vac. Sci. Technol., B 32, 051209 (2014). 10.1116/1.4893976
- (2014) J. Vac. Sci. Technol., B , vol.32
- Liu, F.¹ Huang, L.² Davis, R.F.³ Porter, L.M.⁴ Schreiber, D.K.⁵ Kuchibatla, S.V.N.T.⁶ Shutthanandan, V.⁷ Thevuthasan, S.⁸ Preble, E.A.⁹ Paskova, T.¹⁰ Evans, K.R.¹¹

26
- 79959662836
- T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, Appl. Phys. Lett. 98, 191903 (2011). 10.1063/1.3589370
- (2011) Appl. Phys. Lett. , vol.98
- Prosa, T.J.¹ Clifton, P.H.² Zhong, H.³ Tyagi, A.⁴ Shivaraman, R.⁵ Denbaars, S.P.⁶ Nakamura, S.⁷ Speck, J.S.⁸

27
- 79961094177
- D. Watson-Parris, M. J. Godfrey, P. Dawson, R. a. Oliver, M. J. Galtrey, M. J. Kappers, and C. J. Humphreys, Phys. Rev. B 83, 115321 (2011). 10.1103/PhysRevB.83.115321
- (2011) Phys. Rev. B , vol.83
- Watson-Parris, D.¹ Godfrey, M.J.² Dawson, P.³ Oliver, R.A.⁴ Galtrey, M.J.⁵ Kappers, M.J.⁶ Humphreys, C.J.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.