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Applied Physics Letters

Volumn 101, Issue 8, 2012, Pages

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

(4) Wu, Yuh Renn a Shivaraman, Ravi b Wang, Kuang Chung a Speck, James S b

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE TOMOGRAPHY; COMMERCIAL GRADE; COMPOSITION DISTRIBUTIONS; CURRENT VOLTAGE CURVE; DEVICE PERFORMANCE; DRIFT DIFFUSION; INTERNAL QUANTUM EFFICIENCY; NANO SCALE; NANOSCALE STRUCTURE;

INDIUM; LIGHT EMITTING DIODES; PHYSICAL PROPERTIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84865506014 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4747532 Document Type: Article

Times cited : (117)

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