메뉴 건너뛰기




Volumn 3, Issue 16, 2015, Pages 3946-3953

Stability and electronic properties of silicene on WSe2

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; LATTICE MISMATCH; VAN DER WAALS FORCES;

EID: 84927740453     PISSN: 20507534     EISSN: 20507526     Source Type: Journal    
DOI: 10.1039/c5tc00435g     Document Type: Article
Times cited : (40)

References (45)
  • 1
    • 14344270153 scopus 로고
    • Theoretical Possibility of Stage Corrugation in Si and Ge Analogs of Graphite
    • K. Takeda K. Shiraishi Theoretical Possibility of Stage Corrugation in Si and Ge Analogs of Graphite Phys. Rev. B: Condens. Matter Mater. Phys. 1994 50 14916 14922
    • (1994) Phys. Rev. B: Condens. Matter Mater. Phys. , vol.50 , pp. 14916-14922
    • Takeda, K.1    Shiraishi, K.2
  • 3
    • 84901660687 scopus 로고    scopus 로고
    • Beyond Graphene: Stable Elemental Monolayers of Silicene and Germanene
    • N. J. Roome J. D. Carey Beyond Graphene: Stable Elemental Monolayers of Silicene and Germanene ACS Appl. Mater. Interfaces 2014 6 7743 7750
    • (2014) ACS Appl. Mater. Interfaces , vol.6 , pp. 7743-7750
    • Roome, N.J.1    Carey, J.D.2
  • 8
    • 80051498457 scopus 로고    scopus 로고
    • Quantum Spin Hall Effect in Silicene and Two-Dimensional Germanium
    • C. Liu W. Feng Y. Yao Quantum Spin Hall Effect in Silicene and Two-Dimensional Germanium Phys. Rev. Lett. 2011 107 076802
    • (2011) Phys. Rev. Lett. , vol.107 , pp. 076802
    • Liu, C.1    Feng, W.2    Yao, Y.3
  • 13
    • 84867531556 scopus 로고    scopus 로고
    • Structural Evolution of Single-Layer Films during Deposition of Silicon on Silver: A First-Principles Study
    • D. Kaltsas L. Tsetseris A. Dimoulas Structural Evolution of Single-Layer Films during Deposition of Silicon on Silver: A First-Principles Study J. Phys.: Condens. Matter 2012 24 442001
    • (2012) J. Phys.: Condens. Matter , vol.24 , pp. 442001
    • Kaltsas, D.1    Tsetseris, L.2    Dimoulas, A.3
  • 15
    • 84879966936 scopus 로고    scopus 로고
    • Absence of a Dirac Cone in Silicene on Ag(111): First-Principles Density Functional Calculations with a Modified Effective Band Structure Technique
    • Y. Wang H. Cheng Absence of a Dirac Cone in Silicene on Ag(111): First-Principles Density Functional Calculations with a Modified Effective Band Structure Technique Phys. Rev. B: Condens. Matter Mater. Phys. 2013 87 245430
    • (2013) Phys. Rev. B: Condens. Matter Mater. Phys. , vol.87 , pp. 245430
    • Wang, Y.1    Cheng, H.2
  • 16
    • 84884993565 scopus 로고    scopus 로고
    • Electronic Structures of Silicene/GaS Heterosheets
    • Y. Ding Y. Wang Electronic Structures of Silicene/GaS Heterosheets Appl. Phys. Lett. 2013 103 043114
    • (2013) Appl. Phys. Lett. , vol.103 , pp. 043114
    • Ding, Y.1    Wang, Y.2
  • 17
    • 84881659745 scopus 로고    scopus 로고
    • Silicene on Hydrogen-Passivated Si(111) and Ge(111) Substrates
    • S. Kokott L. Matthes F. Bechstedt Silicene on Hydrogen-Passivated Si(111) and Ge(111) Substrates Phys. Status Solidi RRL 2013 7 538 541
    • (2013) Phys. Status Solidi RRL , vol.7 , pp. 538-541
    • Kokott, S.1    Matthes, L.2    Bechstedt, F.3
  • 19
    • 84892763341 scopus 로고    scopus 로고
    • Bandgap Opening in Silicene: Effect of Substrates
    • N. Gao J. Li Q. Jiang Bandgap Opening in Silicene: Effect of Substrates Chem. Phys. Lett. 2014 592 222 226
    • (2014) Chem. Phys. Lett. , vol.592 , pp. 222-226
    • Gao, N.1    Li, J.2    Jiang, Q.3
  • 20
    • 84878121257 scopus 로고    scopus 로고
    • Silicene on Substrates: A Way to Preserve or Tune Its Electronic Properties
    • H. Liu J. Gao J. Zhao Silicene on Substrates: A Way to Preserve or Tune Its Electronic Properties J. Phys. Chem. C 2013 117 10353 10359
    • (2013) J. Phys. Chem. C , vol.117 , pp. 10353-10359
    • Liu, H.1    Gao, J.2    Zhao, J.3
  • 22
    • 84903822416 scopus 로고    scopus 로고
    • Tunable Band Gaps in Graphene/GaN van der Waals Heterostructures
    • L. Huang Q. Yue J. Kang Y. Li J. Li Tunable Band Gaps in Graphene/GaN van der Waals Heterostructures J. Phys.: Condens. Matter 2014 26 295304
    • (2014) J. Phys.: Condens. Matter , vol.26 , pp. 295304
    • Huang, L.1    Yue, Q.2    Kang, J.3    Li, Y.4    Li, J.5
  • 24
    • 79961124201 scopus 로고    scopus 로고
    • First-Principles Study of Strain-Induced Modulation of Energy Gaps of Graphene/BN and BN Bilayers
    • X. Zhong Y. K. Yap R. Pandey S. P. Karna First-Principles Study of Strain-Induced Modulation of Energy Gaps of Graphene/BN and BN Bilayers Phys. Rev. B: Condens. Matter Mater. Phys. 2011 83 193403
    • (2011) Phys. Rev. B: Condens. Matter Mater. Phys. , vol.83 , pp. 193403
    • Zhong, X.1    Yap, Y.K.2    Pandey, R.3    Karna, S.P.4
  • 28
    • 84884944787 scopus 로고    scopus 로고
    • Structural, Electronic, and Optical Properties of Hydrogenated Few-Layer Silicene: Size and Stacking Effects
    • Y. Liu H. Shu P. Liang D. Cao X. Chen W. Lu Structural, Electronic, and Optical Properties of Hydrogenated Few-Layer Silicene: Size and Stacking Effects J. Appl. Phys. 2013 114 094308
    • (2013) J. Appl. Phys. , vol.114 , pp. 094308
    • Liu, Y.1    Shu, H.2    Liang, P.3    Cao, D.4    Chen, X.5    Lu, W.6
  • 30
    • 84902440469 scopus 로고    scopus 로고
    • Tunable Band Gap and Doping Type in Silicene by Surface Sdsorption: Towards Tunneling Transistors
    • Z. Ni H. Zhong X. Jiang R. Quhe G. Luo Y. Wang M. Ye J. Yang J. Shi J. Lu Tunable Band Gap and Doping Type in Silicene by Surface Sdsorption: Towards Tunneling Transistors Nanoscale 2014 6 7609 7618
    • (2014) Nanoscale , vol.6 , pp. 7609-7618
    • Ni, Z.1    Zhong, H.2    Jiang, X.3    Quhe, R.4    Luo, G.5    Wang, Y.6    Ye, M.7    Yang, J.8    Shi, J.9    Lu, J.10
  • 33
    • 0011236321 scopus 로고    scopus 로고
    • From Ultrasoft Pseudopotentials to the Projector Augmented-Wave Method
    • G. Kresse D. Joubert From Ultrasoft Pseudopotentials to the Projector Augmented-Wave Method Phys. Rev. B: Condens. Matter Mater. Phys. 1999 59 1758 1775
    • (1999) Phys. Rev. B: Condens. Matter Mater. Phys. , vol.59 , pp. 1758-1775
    • Kresse, G.1    Joubert, D.2
  • 34
    • 4243943295 scopus 로고    scopus 로고
    • Generalized Gradient Approximation Made Simple
    • J. P. Perdew K. Burke M. Ernzerhof Generalized Gradient Approximation Made Simple Phys. Rev. Lett. 1996 77 3865 3868
    • (1996) Phys. Rev. Lett. , vol.77 , pp. 3865-3868
    • Perdew, J.P.1    Burke, K.2    Ernzerhof, M.3
  • 35
    • 33750559983 scopus 로고    scopus 로고
    • Semiempirical GGA-Type Density Functional Constructed with a Long-Range Dispersion Correction
    • S. Grimme Semiempirical GGA-Type Density Functional Constructed with a Long-Range Dispersion Correction J. Comput. Chem. 2006 27 1787 1799
    • (2006) J. Comput. Chem. , vol.27 , pp. 1787-1799
    • Grimme, S.1
  • 36
    • 84864536898 scopus 로고    scopus 로고
    • 2 (M = Mo, W; X = S, Se, Te) from Ab-Initio Theory: New Direct Band Gap Semiconductors
    • 2 (M = Mo, W; X = S, Se, Te) from Ab-Initio Theory: New Direct Band Gap Semiconductors Eur. Phys. J. B 2012 85 186
    • (2012) Eur. Phys. J. B , vol.85 , pp. 186
    • Kumar, A.1    Ahluwalia, P.2
  • 40
    • 84908583905 scopus 로고    scopus 로고
    • Band Gap Opening in Bilayer Silicene by Alkali Metal Intercalation
    • H. Liu N. Han J. Zhao Band Gap Opening in Bilayer Silicene by Alkali Metal Intercalation J. Phys.: Condens. Matter 2014 26 475303
    • (2014) J. Phys.: Condens. Matter , vol.26 , pp. 475303
    • Liu, H.1    Han, N.2    Zhao, J.3
  • 43
    • 84875775731 scopus 로고    scopus 로고
    • Physicochemical Insight into Gap Openings in Graphene
    • Y. F. Zhu Q. Q. Dai M. Zhao Q. Jiang Physicochemical Insight into Gap Openings in Graphene Sci. Rep. 2013 3 1524
    • (2013) Sci. Rep. , vol.3 , pp. 1524
    • Zhu, Y.F.1    Dai, Q.Q.2    Zhao, M.3    Jiang, Q.4
  • 45
    • 76749150089 scopus 로고    scopus 로고
    • Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature
    • F. Xia D. B. Farmer Y.-M. Lin P. Avouris Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature Nano Lett. 2010 10 715 718
    • (2010) Nano Lett. , vol.10 , pp. 715-718
    • Xia, F.1    Farmer, D.B.2    Lin, Y.-M.3    Avouris, P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.