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Volumn 103, Issue 4, 2013, Pages

Electronic structures of silicene/GaS heterosheets

Author keywords

[No Author keywords available]

Indexed keywords

DIRAC POINT; FIRST-PRINCIPLES CALCULATION; GALLIUM SULFIDE; HETEROSHEETS; LINEAR DISPERSION; SILICENE;

EID: 84884993565     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4816753     Document Type: Article
Times cited : (121)

References (36)
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    • The phonon calculations are performed in a large 4 × 4 supercell of GaS nanosheets by the Phonopy code:, 10.1103/PhysRevB.78.134106
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    • The binding energy is calculated as the energy differences between the heterosheets and the isolated nanosheets with the same intralayer lattice
    • The binding energy is calculated as the energy differences between the heterosheets and the isolated nanosheets with the same intralayer lattice.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.