Silicene on hydrogen-passivated Si(111) and Ge(111) substrates

Physica Status Solidi - Rapid Research Letters

Volumn 7, Issue 8, 2013, Pages 538-541

  Kokott, Sebastian ^a   Matthes, Lars ^a   Bechstedt, Friedhelm ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Dirac cone; Energetic stability; Group IV semiconductors; Silicene; Surfaces

Indexed keywords

BRILLOUIN ZONES; DIRAC CONES; ENERGETIC STABILITY; FIRST-PRINCIPLES CALCULATION; FUNDAMENTAL GAPS; GROUP-IV SEMICONDUCTORS; HONEYCOMB LATTICES; SILICENE;

CALCULATIONS; GERMANIUM; SILICON; SURFACES;

PASSIVATION;

EID: 84881659745     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201307215     Document Type: Article

References (22)

1. E. Durgun, S. Tongay, and S. Ciraci, Phys. Rev. B 72, 075420 (2005).
2. G. G. Guzmán-Verri and L. C. Lew Yan Voon, Phys. Rev. B 76, 075131 (2007).
3. S. Cahangirov, M. Topsakal, E. Aktürk, H. Şfiahin, and S. Ciraci, Phys. Rev. Lett. 102, 236804 (2009).
4. F. Bechstedt, L. Matthes, P. Gori, and O. Pulci, Appl. Phys. Lett. 100(26), 261906 (2012).
5. L. Matthes, P. Gori, O. Pulci, and F. Bechstedt, Phys. Rev. B 87, 035438 (2013).
6. P. Vogt, P. De Padova, C. Quaresima, J. Avila, E. Frantzeskakis, M. C. Asensio, A. Resta, B. Ealet, and G. Le Lay, Phys. Rev. Lett. 108, 155501 (2012).
7. C. L. Lin, R. Arafune, K. Kawahara, N. Tsukahara, E. Minamitani, Y. Kim, N. Takagi, and M. Kawai, Appl. Phys. Express 5(4), 045802 (2012).
8. L. Chen, C. C. Liu, B. Feng, X. He, P. Cheng, Z. Ding, S. Meng, Y. Yao, and K. Wu, Phys. Rev. Lett. 109, 056804 (2012).
9. P. D. Padova, P. Vogt, A. Resta, J. Avila, I. Razado-Colambo, C. Quaresima, C. Ottaviani, B. Olivieri, T. Bruhn, T. Hirahara, T. Shirai, S. Hasegawa, M. C. Asensio, and G. L. Lay, Appl. Phys. Lett. 102(16), 163106 (2013).
10. A. Fleurence, R. Friedlein, T. Ozaki, H. Kawai, Y. Wang, and Y. Yamada-Takamura, Phys. Rev. Lett. 108, 245501 (2012).
11. L. Meng, Y. Wang, L. Zhang, S. Du, R. Wu, L. Li, Y. Zhang, G. Li, H. Zhou, W. A. Hofer, and H. J. Gao, Nano Lett. 13(2), 685-690 (2013).
12. C. L. Lin, R. Arafune, K. Kawahara, M. Kanno, N. Tsukahara, E. Minamitani, Y. Kim, M. Kawai, and N. Takagi, Phys. Rev. Lett. 110, 076801 (2013).
13. P. Gori, O. Pulci, F. Ronci, S. Colonna, and F. Bechstedt, Appl. Phys. Lett., submitted (2013).
14. R. Arafune, C. L. Lin, R. Nagao, M. Kawai, and N. Takagi, Phys. Rev. Lett. 110, 229701 (2013).
15. L. Chen, C. C. Liu, B. Feng, X. He, P. Cheng, Z. Ding, S. Meng, Y. Yao, and K. Wu, Phys. Rev. Lett. 110, 229702 (2013).
16. W. Mönch, Semiconductor Surfaces and Interfaces (Springer, Berlin, 2001).
17. J. O. Hauch, M. Fonine, U. May, R. Calarco, H. Kittur, J. M. Choi, U. Rüdiger, and G. Güntherodt, Adv. Funct. Mater. 11(3), 179-185 (2001).
18. G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11169-11186 (1996).
19. M. Dion, H. Rydberg, E. Schröder, D. C. Langreth, and B. I. Lundqvist, Phys. Rev. Lett. 92, 246401 (2004).
20. J. Klimeš, D. R. Bowler, and A. Michaelides, Phys. Rev. B 83, 195131 (2011).
21. G. Kresse and D. Joubert, Phys. Rev. B 59, 1758-1775 (1999).
22. K. Novoselov, Nature Mater. 6(10), 720-721 (2007).