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Volumn 6, Issue 13, 2014, Pages 7609-7618

Tunable band gap and doping type in silicene by surface adsorption: Towards tunneling transistors

(10) Ni, Zeyuan a Zhong, Hongxia a Jiang, Xinhe a Quhe, Ruge a Luo, Guangfu c Wang, Yangyang a Ye, Meng a Yang, Jinbo a,b Shi, Junjie a Lu, Jing a,b

a PEKING UNIVERSITY (China)

b Collaborative Innovation Center of Quantum Matter ^* (China)

c Wisconsin Electric Machines and Power Electronics Consortium (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRONIC PROPERTIES; ENERGY GAP; FIELD EFFECT TRANSISTORS; QUANTUM ELECTRONICS;

FIRST-PRINCIPLES CALCULATION; ON STATE CURRENT; QUANTUM TRANSPORT SIMULATIONS; SUBTHRESHOLD SWING; SURFACE ADSORPTION; TRANSITION METAL ATOMS; TUNABLE BAND-GAP; TUNNELING FIELD-EFFECT TRANSISTORS;

ADSORPTION;

EID: 84902440469 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr00028e Document Type: Article

Times cited : (167)

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