Sub-parts per million NO2 chemi-transistor sensors based on composite porous silicon/gold nanostructures prepared by metal-assisted etching

ACS Applied Materials and Interfaces

Volumn 7, Issue 13, 2015, Pages 7136-7145

  Sainato, Michela ^a   Strambini, Lucanos Marsilio ^a   Rella, Simona ^b   Mazzotta, Elisabetta ^b   Barillaro, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

^b UNIVERSITY OF SALENTO   (Italy)

Author keywords

Chemi transistor; Composite nanomaterial; Gas sensing; Metal nanostructure; Nitrogen dioxide; Porous silicon

Indexed keywords

CHEMICAL SENSORS; CMOS INTEGRATED CIRCUITS; ETCHING; GAS SENSING ELECTRODES; GOLD NANOPARTICLES; JUNCTION GATE FIELD EFFECT TRANSISTORS; METAL NANOPARTICLES; METALS; MOS DEVICES; NANOCATALYSTS; NITROGEN OXIDES; OXIDE SEMICONDUCTORS; POROUS SILICON; SEMICONDUCTOR DOPING; SYNTHESIS (CHEMICAL);

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; COMPOSITE NANOMATERIAL; GAS SENSING; JUNCTION FIELD-EFFECT TRANSISTORS (JFETS); METAL ASSISTED ETCHINGS; METAL NANOSTRUCTURE; NANOSTRUCTURED SEMICONDUCTOR; NITROGEN DIOXIDES;

TRANSISTORS;

EID: 84926670351     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am5089633     Document Type: Article

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