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Advanced Materials

Volumn 19, Issue 22, 2007, Pages 4018-4023

A nitrogen dioxide sensor based on an organic transistor constructed from amorphous semiconducting polymers

(6) Das, Arindam a Dost, René a Richardson, Tim a Grell, Martin a Morrison, John J b Turner, Michael L b

a UNIVERSITY OF SHEFFIELD (United Kingdom)

b UNIVERSITY OF MANCHESTER (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL SENSORS; NITROGEN OXIDES; THRESHOLD VOLTAGE; TRANSISTORS;

CHARGE CARRIER MOBILITY; CRYSTALLINE ORGANIC SEMICONDUCTORS; NITROGEN DIOXIDE SENSORS; ORGANIC FIELD EFFECT TRANSISTORS;

SEMICONDUCTING POLYMERS;

EID: 36549042564 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/adma.200701504 Document Type: Article

Times cited : (153)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.