XPS and SIMS analysis of gold suicide grown on a bromine passivated Si(111) substrate

Applied Surface Science

Volumn 137, Issue 1-3, 1999, Pages 103-112

  Sundaravel, B ^a,e   Sekar, K ^a,f   Kuri, G ^a,g   Satyam, P V ^a,h   Dev, B N ^a   Bera, Santanu ^b   Narasimhan, S V ^b   Chakraborty, P ^c   Caccavale, F ^d  

^a INSTITUTE OF PHYSICS   (India)

^b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^c SAHA INSTITUTE OF NUCLEAR PHYSICS   (India)

^d UNIVERSITY OF PADOVA   (Italy)

^e CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^f UNIVERSITY OF OSNABRÜCK   (Germany)

^g Korea Research Institute of Standards and Science   (South Korea)

^h ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Gold suicide; Interface; SIMS; XPS

Indexed keywords

ANNEALING; BINDING ENERGY; EPITAXIAL GROWTH; ETCHING; FILM GROWTH; INTERFACES (MATERIALS); SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; SPUTTER DEPOSITION; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL SHIFT; GOLD SILICIDE;

GOLD COMPOUNDS;

EID: 0032762540     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00378-X     Document Type: Article

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