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Advanced Materials

Volumn 23, Issue 20, 2011, Pages 2306-2312

Gate-tunable surface processes on a single-nanowire field-effect transistor

(2) Mubeen, Syed a Moskovits, Martin a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

catalysis; field effect transistors; nanoparticles; nanowires; sensors

Indexed keywords

DEPLETION REGION; FIELD EFFECTS; GATE OXIDE; GATE POTENTIALS; HIGH DIELECTRIC CONSTANT MATERIALS; IN-CHANNELS; SURFACE CHEMICALS; SURFACE PROCESS;

NANOPARTICLES; NANOWIRES; PALLADIUM; SURFACE CHEMISTRY; SURFACES; TIN; TIN OXIDES; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

METAL NANOPARTICLE; NANOWIRE; PALLADIUM; TIN DERIVATIVE; TIN DIOXIDE;

ARTICLE; CHEMISTRY; SEMICONDUCTOR; SURFACE PROPERTY;

METAL NANOPARTICLES; NANOWIRES; PALLADIUM; SURFACE PROPERTIES; TIN COMPOUNDS; TRANSISTORS, ELECTRONIC;

EID: 79958845250 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201004203 Document Type: Article

Times cited : (35)

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