-
1
-
-
33847690144
-
The rise of graphene
-
A. K. Geim and K. S. Novoselov, The rise of graphene, Nat. Mater. 6, 183 (2007). 1476-1122 10.1038/nmat1849
-
(2007)
Nat. Mater.
, vol.6
, pp. 183
-
-
Geim, A.K.1
Novoselov, K.S.2
-
2
-
-
59949098337
-
The electronic properties of graphene
-
A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, The electronic properties of graphene, Rev. Mod. Phys. 81, 109 (2009). RMPHAT 0034-6861 10.1103/RevModPhys.81.109
-
(2009)
Rev. Mod. Phys.
, vol.81
, pp. 109
-
-
Castro Neto, A.H.1
Guinea, F.2
Peres, N.M.R.3
Novoselov, K.S.4
Geim, A.K.5
-
3
-
-
84894458960
-
-
Cambridge University Press, Cambridge
-
M. I. Katsnelson, Graphene (Cambridge University Press, Cambridge, 2012).
-
(2012)
Graphene
-
-
Katsnelson, M.I.1
-
4
-
-
84874987783
-
Electricfield dependence of the effective dielectric constant in graphene
-
E. J. G. Santos and E. Kaxiras, Electricfield dependence of the effective dielectric constant in graphene, Nano Lett. 13, 898 (2013). NALEFD 1530-6984 10.1021/nl303611v
-
(2013)
Nano Lett.
, vol.13
, pp. 898
-
-
Santos, E.J.G.1
Kaxiras, E.2
-
5
-
-
14344270153
-
Theoretical possibility of stage corrugation in Si and Ge analogs of graphite
-
K. Takeda and K. Shiraishi, Theoretical possibility of stage corrugation in Si and Ge analogs of graphite, Phys. Rev. B 50, 14916 (1994). PRBMDO 0163-1829 10.1103/PhysRevB.50.14916
-
(1994)
Phys. Rev. B
, vol.50
, pp. 14916
-
-
Takeda, K.1
Shiraishi, K.2
-
6
-
-
34548452627
-
Electronic structure of silicon-based nanostructures
-
G. G. Guzmán-Verri and L. C. Lew Yan Voon, Electronic structure of silicon-based nanostructures, Phys. Rev. B 76, 075131 (2007). PRBMDO 1098-0121 10.1103/PhysRevB.76.075131
-
(2007)
Phys. Rev. B
, vol.76
, pp. 075131
-
-
Guzmán-Verri, G.G.1
Lew Yan Voon, L.C.2
-
7
-
-
78650663146
-
Epitaxial growth of a silicene sheet
-
B. Lalmi, H. Oughaddou, H. Enriquez, A. Kara, S. Vizzini, B. Ealet, and B. Aufray, Epitaxial growth of a silicene sheet, Appl. Phys. Lett. 97, 223109 (2010). APPLAB 0003-6951 10.1063/1.3524215
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 223109
-
-
Lalmi, B.1
Oughaddou, H.2
Enriquez, H.3
Kara, A.4
Vizzini, S.5
Ealet, B.6
Aufray, B.7
-
8
-
-
84859790102
-
Silicene: Compelling experimental evidence for graphene like two-dimensional silicon
-
P. Vogt, P. De Padova, C. Quaresima, J. Avila, E. Frantzeskakis, M. C. Asensio, A. Resta, B. Ealet, and G. Le Lay, Silicene: Compelling experimental evidence for graphene like two-dimensional silicon, Phys. Rev. Lett. 108, 155501 (2012). PRLTAO 0031-9007 10.1103/PhysRevLett.108.155501
-
(2012)
Phys. Rev. Lett.
, vol.108
, pp. 155501
-
-
Vogt, P.1
De Padova, P.2
Quaresima, C.3
Avila, J.4
Frantzeskakis, E.5
Asensio, M.C.6
Resta, A.7
Ealet, B.8
Le Lay, G.9
-
9
-
-
84864588398
-
Evidence for dirac fermions in a honeycomb lattice based on silicon
-
L. Chen, C.-C. Liu, B. Feng, X. He, P. Cheng, Z. Ding, S. Meng, Y. Yao, and K. Wu, Evidence for dirac fermions in a honeycomb lattice based on silicon, Phys. Rev. Lett. 109, 056804 (2012). PRLTAO 0031-9007 10.1103/PhysRevLett.109.056804
-
(2012)
Phys. Rev. Lett.
, vol.109
, pp. 056804
-
-
Chen, L.1
Liu, C.-C.2
Feng, B.3
He, X.4
Cheng, P.5
Ding, Z.6
Meng, S.7
Yao, Y.8
Wu, K.9
-
10
-
-
84876535705
-
Stability and exfoliation of germanane: A germanium graphane analogue
-
E. Bianco, S. Butler, S. Jiang, O. D. Restrepo, W. Windl, and J. E. Goldberger, Stability and exfoliation of germanane: A germanium graphane analogue, ACS Nano 7, 4414 (2013). 1936-0851 10.1021/nn4009406
-
(2013)
ACS Nano
, vol.7
, pp. 4414
-
-
Bianco, E.1
Butler, S.2
Jiang, S.3
Restrepo, O.D.4
Windl, W.5
Goldberger, J.E.6
-
11
-
-
67249122406
-
Two- and one-dimensional honeycomb structures of silicon and germanium
-
S. Cahangirov, M. Topsakal, E. Aktürk, H. Şahin, and S. Ciraci, Two- and one-dimensional honeycomb structures of silicon and germanium, Phys. Rev. Lett. 102, 236804 (2009). PRLTAO 0031-9007 10.1103/PhysRevLett.102.236804
-
(2009)
Phys. Rev. Lett.
, vol.102
, pp. 236804
-
-
Cahangirov, S.1
Topsakal, M.2
Aktürk, E.3
Şahin, H.4
Ciraci, S.5
-
12
-
-
84875413255
-
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
-
M. Chhowalla, H. S. Shin, G. Eda, L.-J. Li, K. P. Loh, and H. Zhang, The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets, Nat. Chem. 5, 263 (2013). 1755-4330 10.1038/nchem.1589
-
(2013)
Nat. Chem.
, vol.5
, pp. 263
-
-
Chhowalla, M.1
Shin, H.S.2
Eda, G.3
Li, L.-J.4
Loh, K.P.5
Zhang, H.6
-
13
-
-
84899764319
-
Spin and pseudospins in layered transition metal dichalcogenides
-
X. Xu, W. Yao, D. Xiao, and T. F. Heinz, Spin and pseudospins in layered transition metal dichalcogenides, Nat. Phys. 10, 343 (2014). 1745-2473 10.1038/nphys2942
-
(2014)
Nat. Phys.
, vol.10
, pp. 343
-
-
Xu, X.1
Yao, W.2
Xiao, D.3
Heinz, T.F.4
-
14
-
-
84891365067
-
Electrically driven tuning of the dielectric constant in (Equation presented) layers
-
E. J. G. Santos and E. Kaxiras, Electrically driven tuning of the dielectric constant in (Equation presented) layers, ACS Nano 7, 10741 (2013). 1936-0851 10.1021/nn403738b
-
(2013)
ACS Nano
, vol.7
, pp. 10741
-
-
Santos, E.J.G.1
Kaxiras, E.2
-
15
-
-
84920846601
-
Electronics based on two-dimensional materials
-
G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo, Electronics based on two-dimensional materials, Nat. Nanotechnol. 9, 768 (2014). 1748-3387 10.1038/nnano.2014.207
-
(2014)
Nat. Nanotechnol.
, vol.9
, pp. 768
-
-
Fiori, G.1
Bonaccorso, F.2
Iannaccone, G.3
Palacios, T.4
Neumaier, D.5
Seabaugh, A.6
Banerjee, S.K.7
Colombo, L.8
-
16
-
-
77955231284
-
Graphene transistors
-
F. Schwierz, Graphene transistors, Nat. Nanotechnol. 5, 487 (2010). 1748-3387 10.1038/nnano.2010.89
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 487
-
-
Schwierz, F.1
-
17
-
-
79952406873
-
Single-layer (Equation presented) transistors
-
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Single-layer (Equation presented) transistors, Nat. Nanotechnol. 6, 147 (2011). 1748-3387 10.1038/nnano.2010.279
-
(2011)
Nat. Nanotechnol.
, vol.6
, pp. 147
-
-
Radisavljevic, B.1
Radenovic, A.2
Brivio, J.3
Giacometti, V.4
Kis, A.5
-
18
-
-
84901193930
-
Black phosphorus field-effect transistors
-
L. Li, Y. Yu, G. J. Ye, Q. Ge, X. Ou, H. Wu, D. Feng, X. H. Chen, and Y. Zhang, Black phosphorus field-effect transistors, Nat. Nanotechnol. 9, 372 (2014). 1748-3387 10.1038/nnano.2014.35
-
(2014)
Nat. Nanotechnol.
, vol.9
, pp. 372
-
-
Li, L.1
Yu, Y.2
Ye, G.J.3
Ge, Q.4
Ou, X.5
Wu, H.6
Feng, D.7
Chen, X.H.8
Zhang, Y.9
-
19
-
-
84898060562
-
Phosphorene: An unexplored 2d semiconductor with a high hole mobility
-
H. Liu, A. T. Neal, Z. Zhu, Z. Luo, X. Xu, D. Tománek, and P. D. Ye, Phosphorene: An unexplored 2d semiconductor with a high hole mobility, ACS Nano 8, 4033 (2014). 1936-0851 10.1021/nn501226z
-
(2014)
ACS Nano
, vol.8
, pp. 4033
-
-
Liu, H.1
Neal, A.T.2
Zhu, Z.3
Luo, Z.4
Xu, X.5
Tománek, D.6
Ye, P.D.7
-
20
-
-
84896300940
-
Electric field effect in ultrathin black phosphorus
-
S. P. Koenig, R. A. Doganov, H. Schmidt, A. H. Castro Neto, and B. Özyilmaz, Electric field effect in ultrathin black phosphorus, Appl. Phys. Lett. 104, 103106 (2014). APPLAB 0003-6951 10.1063/1.4868132
-
(2014)
Appl. Phys. Lett.
, vol.104
, pp. 103106
-
-
Koenig, S.P.1
Doganov, R.A.2
Schmidt, H.3
Castro Neto, A.H.4
Özyilmaz, B.5
-
21
-
-
84899739990
-
Semiconducting layered blue phosphorus: A computational study
-
Z. Zhu and D. Tománek, Semiconducting layered blue phosphorus: A computational study, Phys. Rev. Lett. 112, 176802 (2014). PRLTAO 0031-9007 10.1103/PhysRevLett.112.176802
-
(2014)
Phys. Rev. Lett.
, vol.112
, pp. 176802
-
-
Zhu, Z.1
Tománek, D.2
-
22
-
-
84905014867
-
Phase coexistence and metal-insulator transition in few-layer phosphorene: A computational study
-
J. Guan, Z. Zhu, and D. Tománek, Phase coexistence and metal-insulator transition in few-layer phosphorene: A computational study, Phys. Rev. Lett. 113, 046804 (2014). PRLTAO 0031-9007 10.1103/PhysRevLett.113.046804
-
(2014)
Phys. Rev. Lett.
, vol.113
, pp. 046804
-
-
Guan, J.1
Zhu, Z.2
Tománek, D.3
-
23
-
-
84856425834
-
Squeezing lone pairs: The (Equation presented) to (Equation presented) pressure-induced phase transition in black phosphorus
-
S. E. Boulfelfel, G. Seifert, Y. Grin, and S. Leoni, Squeezing lone pairs: The (Equation presented) to (Equation presented) pressure-induced phase transition in black phosphorus, Phys. Rev. B 85, 014110 (2012). PRBMDO 1098-0121 10.1103/PhysRevB.85.014110
-
(2012)
Phys. Rev. B
, vol.85
, pp. 014110
-
-
Boulfelfel, S.E.1
Seifert, G.2
Grin, Y.3
Leoni, S.4
-
24
-
-
84899721921
-
Strain-induced gap modification in black phosphorus
-
A. S. Rodin, A. Carvalho, and A. H. Castro Neto, Strain-induced gap modification in black phosphorus, Phys. Rev. Lett. 112, 176801 (2014). PRLTAO 0031-9007 10.1103/PhysRevLett.112.176801
-
(2014)
Phys. Rev. Lett.
, vol.112
, pp. 176801
-
-
Rodin, A.S.1
Carvalho, A.2
Castro Neto, A.H.3
-
25
-
-
84898072730
-
Bilayer phosphorene: Effect of stacking order on bandgap and its potential applications in thin-film solar cells
-
J. Dai and X. C. Zeng, Bilayer phosphorene: Effect of stacking order on bandgap and its potential applications in thin-film solar cells, J. Phys. Chem. Lett. 5, 1289 (2014). 1948-7185 10.1021/jz500409m
-
(2014)
J. Phys. Chem. Lett.
, vol.5
, pp. 1289
-
-
Dai, J.1
Zeng, X.C.2
-
26
-
-
36249007086
-
Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect
-
E. V. Castro, K. S. Novoselov, S. V. Morozov, N. M. R. Peres, J. M. B. L. dos Santos, J. Nilsson, F. Guinea, A. K. Geim, and A. H. Castro Neto, Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect, Phys. Rev. Lett. 99, 216802 (2007). PRLTAO 0031-9007 10.1103/PhysRevLett.99.216802
-
(2007)
Phys. Rev. Lett.
, vol.99
, pp. 216802
-
-
Castro, E.V.1
Novoselov, K.S.2
Morozov, S.V.3
Peres, N.M.R.4
Dos Santos, J.M.B.L.5
Nilsson, J.6
Guinea, F.7
Geim, A.K.8
Castro Neto, A.H.9
-
27
-
-
67149121054
-
Direct observation of a widely tunable bandgap in bilayer graphene
-
Y. Zhang, T.-T. Tang, C. Girit, Z. Hao, M. C. Martin, A. Zettl, M. F. Crommie, Y. R. Shen, and F. Wang, Direct observation of a widely tunable bandgap in bilayer graphene, Nature (London) 459, 820 (2009). NATUAS 0028-0836 10.1038/nature08105
-
(2009)
Nature (London)
, vol.459
, pp. 820
-
-
Zhang, Y.1
Tang, T.-T.2
Girit, C.3
Hao, Z.4
Martin, M.C.5
Zettl, A.6
Crommie, M.F.7
Shen, Y.R.8
Wang, F.9
-
28
-
-
84857702775
-
Electrically tunable band gap in silicene
-
N. D. Drummond, V. Zólyomi, and V. I. Fal'ko, Electrically tunable band gap in silicene, Phys. Rev. B 85, 075423 (2012). PRBMDO 1098-0121 10.1103/PhysRevB.85.075423
-
(2012)
Phys. Rev. B
, vol.85
, pp. 075423
-
-
Drummond, N.D.1
Zólyomi, V.2
Fal'ko, V.I.3
-
29
-
-
84855800482
-
Tunable bandgap in silicene and germanene
-
Z. Ni, Q. Liu, K. Tang, J. Zheng, J. Zhou, R. Qin, Z. Gao, D. Yu, and J. Lu, Tunable bandgap in silicene and germanene, Nano Lett. 12, 113 (2012). NALEFD 1530-6984 10.1021/nl203065e
-
(2012)
Nano Lett.
, vol.12
, pp. 113
-
-
Ni, Z.1
Liu, Q.2
Tang, K.3
Zheng, J.4
Zhou, J.5
Qin, R.6
Gao, Z.7
Yu, D.8
Lu, J.9
-
30
-
-
84867522812
-
Tuning electronic structure of bilayer (Equation presented) by vertical electric field: A first-principles investigation
-
Q. Liu, L. Li, Y. Li, Z. Gao, Z. Chen, and J. Lu, Tuning electronic structure of bilayer (Equation presented) by vertical electric field: A first-principles investigation, J. Phys. Chem. C 116, 21556 (2012). 1932-7447 10.1021/jp307124d
-
(2012)
J. Phys. Chem. C
, vol.116
, pp. 21556
-
-
Liu, Q.1
Li, L.2
Li, Y.3
Gao, Z.4
Chen, Z.5
Lu, J.6
-
31
-
-
82755177414
-
Tunable band gaps in bilayer transition-metal dichalcogenides
-
A. Ramasubramaniam, D. Naveh, and E. Towe, Tunable band gaps in bilayer transition-metal dichalcogenides, Phys. Rev. B 84, 205325 (2011). PRBMDO 1098-0121 10.1103/PhysRevB.84.205325
-
(2011)
Phys. Rev. B
, vol.84
, pp. 205325
-
-
Ramasubramaniam, A.1
Naveh, D.2
Towe, E.3
-
32
-
-
70349568754
-
Quantum espresso: a modular and open-source software project for quantum simulations of materials
-
P. Giannozzi, Quantum espresso: a modular and open-source software project for quantum simulations of materials, J. Phys.: Condens. Matter 21, 395502 (2009). JCOMEL 0953-8984 10.1088/0953-8984/21/39/395502
-
(2009)
J. Phys.: Condens. Matter
, vol.21
, pp. 395502
-
-
Giannozzi, P.1
-
33
-
-
4243943295
-
Generalized gradient approximation made simple
-
J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized gradient approximation made simple, Phys. Rev. Lett. 77, 3865 (1996). PRLTAO 0031-9007 10.1103/PhysRevLett.77.3865
-
(1996)
Phys. Rev. Lett.
, vol.77
, pp. 3865
-
-
Perdew, J.P.1
Burke, K.2
Ernzerhof, M.3
-
34
-
-
0037799714
-
Hybrid functionals based on a screened coulomb potential
-
J. Heyd, G. E. Scuseria, and M. Ernzerhof, Hybrid functionals based on a screened coulomb potential, J. Chem. Phys. 118, 8207 (2003). JCPSA6 0021-9606 10.1063/1.1564060
-
(2003)
J. Chem. Phys.
, vol.118
, pp. 8207
-
-
Heyd, J.1
Scuseria, G.E.2
Ernzerhof, M.3
-
35
-
-
33750559983
-
Semiempirical GGA-type density functional constructed with a long-range dispersion correction
-
S. Grimme, Semiempirical GGA-type density functional constructed with a long-range dispersion correction, J. Comput. Chem. 27, 1787 (2006). JCCHDD 0192-8651 10.1002/jcc.20495
-
(2006)
J. Comput. Chem.
, vol.27
, pp. 1787
-
-
Grimme, S.1
-
36
-
-
84904616293
-
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
-
J. Qiao, X. Kong, Z.-X. Hu, F. Yang, and W. Ji, High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus, Nat. Commun. 5, 4475 (2014). 10.1038/ncomms5475
-
(2014)
Nat. Commun.
, vol.5
, pp. 4475
-
-
Qiao, J.1
Kong, X.2
Hu, Z.-X.3
Yang, F.4
Ji, W.5
|