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Volumn 5, Issue 12, 2012, Pages

Deep-ultraviolet light-emitting diodes fabricated on aln substrates prepared by hydride vapor phase epitaxy

(12) Kinoshita, Toru a,b Hironaka, Keiichiro a Obata, Toshiyuki a Nagashima, Toru a,c Dalmau, Rafael d Schlesser, Raoul d Moody, Baxter d Xie, Jinqiao d Inoue, Shin Ichiro b,e Kumagai, Yoshinao c Koukitu, Akinori c Sitar, Zlatko d,f

a TOKUYAMA CORPORATION (Japan)

b KOBE UNIVERSITY (Japan)

c TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY (Japan)

d HexaTech Inc (United States)

e NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

f North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN LAYERS; ALN SUBSTRATES; BULK ALN; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; EMISSION PEAKING; HIGH-CRYSTALLINE QUALITY; HYDRIDE VAPOR PHASE EPITAXY; INJECTION CURRENTS; LED STRUCTURE; MECHANICAL POLISHING; OPTICAL TRANSPARENCY; OUTPUT POWER; PHYSICAL VAPOR TRANSPORT;

EPITAXIAL GROWTH; FABRICATION; SEMICONDUCTING GALLIUM COMPOUNDS; VAPORS;

LIGHT EMITTING DIODES;

EID: 84871287375 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.5.122101 Document Type: Article

Times cited : (125)

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