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Volumn 6, Issue 9, 2013, Pages

Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy

(10) Kinoshita, Toru a,b Obata, Toshiyuki a Nagashima, Toru a Yanagi, Hiroyuki a Moody, Baxter c Mita, Seiji c Inoue, Shin Ichiro b,d Kumagai, Yoshinao e Koukitu, Akinori e Sitar, Zlatko c,f

a TOKUYAMA CORPORATION (Japan)

b KOBE UNIVERSITY (Japan)

c HexaTech Inc (United States)

d NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

e TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY (Japan)

f North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN SUBSTRATES; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; DISLOCATION DENSITIES; ESTIMATED LIFETIME; HYDRIDE VAPOR PHASE EPITAXY; OPERATION CURRENTS; PERFORMANCE AND RELIABILITIES; TEM ANALYSIS;

EPITAXIAL GROWTH; VAPORS;

LIGHT EMITTING DIODES;

EID: 84883734088 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.7567/APEX.6.092103 Document Type: Article

Times cited : (121)

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