High-output-power 255/280/310nm deep ultraviolet light-emitting diodes and their lifetime characteristics

Semiconductor Science and Technology

Volumn 29, Issue 8, 2014, Pages

  Fujioka, A ^a   Asada, K ^a   Yamada, H ^a   Ohtsuka, T ^a   Ogawa, T ^a   Kosugi, T ^a   Kishikawa, D ^a   Mukai, T ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

AlGaN; deep UV; LED

Indexed keywords

MAGNETIC MATERIALS; SEMICONDUCTOR DEVICES;

ALGAN; COMMERCIAL PACKAGES; DEEP UV; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; EXTERNAL QUANTUM EFFICIENCY; FORWARD CURRENTS; HIGH-CURRENT; JUNCTION TEMPERATURES;

LIGHT EMITTING DIODES;

EID: 84904667450     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/29/8/084005     Document Type: Article

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