SCOPUS 정보 검색 플랫폼

Volumn 4, Issue 9, 2011, Pages

AlGaN-based deep ultraviolet light-emitting diodes fabricated on patterned sapphire substrates

(15) Kim, Myunghee a Fujita, Takehiko a Fukahori, Shinya a Inazu, Tetsuhiko a Pernot, Cyril a Nagasawa, Yosuke a Hirano, Akira a Ippommatsu, Masamichi a Iwaya, Motoaki a Takeuchi, Tetsuya a Kamiyama, Satoshi a Yamaguchi, Masahito b Honda, Yoshio b Amano, Hiroshi b Akasaki, Isamu a

a MEIJO UNIVERSITY (Japan)

b NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; DEEP ULTRAVIOLET; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; EXTERNAL QUANTUM EFFICIENCY; FLIP CHIP; OUTPUT POWER; PATTERNED SAPPHIRE SUBSTRATE; THREADING DISLOCATION DENSITIES;

DC POWER TRANSMISSION; LIGHT EMISSION; SAPPHIRE; ULTRAVIOLET RADIATION;

LIGHT EMITTING DIODES;

EID: 80052575034 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.4.092102 Document Type: Article

Times cited : (93)

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